LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD

• US 20150236210A1
• Filed: 02/24/2015
• Published: 08/20/2015
• Est. Priority Date: 11/18/2010
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Ye Seul, Kim, Kyoung Wan, Yoon, Yeo Jin, Oh, Sang Hyun, Lee, Keum Ju, Lee, Jin Woong, Jeong, Da Yeon, Woo, Sang Won
• Granted Patent: US 9,397,264 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Claims

1-44. -44. (canceled)

45. A light emitting diode (LED) comprising:

a substrate having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge;

a semiconductor stack disposed over a first surface of the substrate, the semiconductor stack comprising;

a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first electrode pad electrically connected to the first conductivity-type semiconductor layer and disposed over the second conductivity-type semiconductor layer and on at least a portion of the first edge of the substrate;

a first electrode extension extending from the first electrode pad along at least a portion of the first edge and at least a portion of the third edge, the first electrode extension electrically connected to the first conductivity-type semiconductor layer;

a second electrode pad electrically connected to the second conductivity-type semiconductor layer, wherein the second electrode pad is disposed over the second conductively-type semiconductor layer and on at least a portion of the second edge of the substrate;

a first insulation layer interposed between the first electrode pad and the second conductivity-type semiconductor layer;

a second insulation functional layer interposed between the second electrode pad and the second conductivity type semiconductor layer; and

a transparent conductive layer disposed over the second conductivity-type semiconductor layer and between the second electrode extension and the second conductivity type semiconductor layer, wherein the transparent conductive layer is separated from the first insulation layer.

46. The LED of claim 45, wherein the first insulation layer comprises opening regions to expose the first conductivity-type semiconductor layer.

47. The LED of claim 46, wherein the first electrode extension is in ohmic contact with the first conductivity-type semiconductor layer through the opening regions.

48. The LED of claim 45, wherein the transparent conductive layer is configured to cover a side surface of second insulation layer.

49. The LED of claim 45, further comprising:

a lower reflector disposed on a second surface of the substrate and opposite to the first surface of the substrate,

wherein the lower reflector includes alternately stacked insulation materials having different indices of refraction.

50. The LED of claim 45, wherein the first insulation layer and the second insulation layer include a reflective material.

51. The LED of claim 45, wherein the first edge, second edge, third edge and fourth edge define structural boundaries of the substrate.

52. The LED of claim 45, wherein the transparent layer includes indium tin oxide (ITO).

53. The LED of claim 45, wherein the substrate includes sapphire.

54. The LED of claim 45, wherein:

the first conductivity-type semiconductor layer includes a p-type nitride semiconductor layer; and

the second conductivity-type semiconductor layer includes an n-type nitride semiconductor layer.

55. The LED of claim 45, wherein the transparent conductive layer is disposed over the second conductivity-type semiconductor layer to include through-holes that expose a portion of the second conductivity-type semiconductor layer.

56. The LED of claim 45, wherein the second insulating layer is interposed between the second electrode extension and the second conductive type semiconductor layer.

57. The LED of claim 45, wherein:

the second insulating layer is patterned between the transparent conductive layer and the second electrode extension to provide an electrical connection between the second electrode extension and the second conductive type semiconductor layer.

58. The LED of claim 45 wherein:

the second conductivity-type semiconductor layer includes through-holes under at least a portion of the first electrode extension to provide an electrical connection to the first conductive type semiconductor layer.

59. The LED of claim 45, wherein the second electrode extension is disposed to extend from the second electrode pad along at least a portion of the fourth edge.

60. The LED of claim 45, wherein:

the first electrode extension is disposed to extend from the first electrode pad towards the second edge; and

the second electrode extension is disposed to extend from the second electrode pad towards the first edge.

61. A light emitting diode (LED) comprising:

a substrate;

a semiconductor stack disposed over a surface of the substrate, the semiconductor stack including;

a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,

wherein the semiconductor stack is disposed to include a plurality of through-holes extending through the second conductivity-type semiconductor layer to expose a portion of the first conductivity-type semiconductor layer;

a first electrode pad disposed over the second conductivity-type semiconductor layer and electrically connected to the first conductivity-type semiconductor layer through at least one of the through-holes of the semiconductor stack;

a second electrode pad disposed over and electrically connected to the second conductively-type semiconductor layer, wherein the second electrode pad and the first electrode pad are disposed on opposing regions on the surface of the substrate;

a first electrode extension extending from the first electrode pad towards the second electrode pad, wherein the first electrode extension is electrically connected to the first conductivity-type semiconductor layer through at least some of the through-holes of the semiconductor stack; and

a second electrode extension extending from the second electrode pad towards the first electrode pad.

62. The LED of claim 61, comprising:

a first insulation layer interposed between the first electrode pad and the second conductivity-type semiconductor layer;

a second insulation layer interposed between the second electrode pad and the second conductivity type semiconductor layer; and

a transparent conductive layer disposed over the second conductivity-type semiconductor layer, wherein the transparent conductive layer is separated from the first insulation layer.

63. The LED of claim 62, wherein the transparent conductivity layer is disposed between the second electrode pad and the second insulation layer.

64. The LED of claim 61, further comprising:

a lower reflector disposed under the substrate, wherein the lower reflector includes alternately stacked insulation materials having different indices of refraction.

65. The LED of claim 61, wherein the first electrode extension includes a plurality of portions extending from the first electrode pad.

66. The LED of claim 61, wherein the second electrode extension includes a plurality of portions extending from the second electrode pad.

67. The LED of claim 61, wherein:

the first conductivity-type semiconductor layer includes a p-type nitride semiconductor layer; and

the second conductivity-type semiconductor layer includes an n-type nitride semiconductor layer.

68. A light emitting diode (LED) comprising:

a substrate;

a semiconductor stack disposed over a surface of the substrate, the semiconductor stack including;

a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,

wherein the semiconductor stack is disposed to include means for providing electrical connections to the first conductivity-type semiconductor layer through the second conductivity-type semiconductor layer;

a transparent conductive layer disposed over a portion of the second conductivity-type semiconductor layer;

a first electrode pad disposed over the second conductivity-type semiconductor layer and electrically connected to the first conductivity-type semiconductor layer through the means for providing electrical connections to the first conductivity-type semiconductor layer;

a second electrode pad disposed over the transparent conductive layer and electrically connected to the second conductively-type semiconductor layer, wherein the second electrode pad and the first electrode pad are disposed on opposing regions on the surface of the substrate;

a first electrode extension extending from the first electrode pad towards the second electrode pad;

a second electrode extension extending from the second electrode pad towards the first electrode pad;

a first insulation means interposed between the first electrode pad and the second conductivity-type semiconductor layer; and

a second insulation means interposed between the transparent conductive layer and the second conductivity type semiconductor layer.

69. The LED of claim 68, wherein the transparent conductive layer is separated from the first insulation means.

70. The LED of claim 68, wherein the means for means for providing electrical connections to the first conductivity-type semiconductor layer through the second conductivity-type semiconductor layer include through-holes extending through the second conductivity-type semiconductor layer.

71. The LED of claim 68, wherein:

at least one of the first insulation means and the second insulation means include SiO₂.