ACOUSTIC BANDGAP STRUCTURES FOR INTEGRATION OF MEMS RESONATORS

• US 20150237423A1
• Filed: 01/26/2015
• Published: 08/20/2015
• Est. Priority Date: 03/21/2013
• Status: Active Grant

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Dana Weinstein, Radhika Marathe, Wentao Wang
• Inventors: BAHR, Bichoy, MARATHE, Radhika, WANG, Wentao, WEINSTEIN, Dana
• Granted Patent: US 9,232,289 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H03H 9/02566 of semiconductor substrates
• CPC Class Codes: H04R 1/00 Details of transducers, loudspeakers or microphones
• CPC Class Codes: H04R 2201/003 Mems transducers or their use
• CPC Class Codes: H04R 31/00 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182

Abstract

Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.

Claims

1. An acoustic bandgap device formed using a semiconductor fabrication tool, the semiconductor fabrication tool having a minimal feature thickness and an allowable via width based on a design rule check of the semiconductor fabrication tool, the device comprising:

a substrate lying in an x-y plane defining an x-direction and a y-direction;

an acoustic resonant cavity disposed over the substrate;

a phononic crystal disposed over the acoustic resonant cavity, the phononic crystal comprising a plurality of unit cells disposed in a periodic arrangement, each unit cell comprising;

(i) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to the minimal feature thickness of the semiconductor fabrication tool, the at least one higher acoustic impedance structure comprising at least one of;

at least one via structure, each via structure having a width in the x-direction about equal to the allowable via width of the semiconductor fabrication tool; and

at least one longitudinal bar, each longitudinal bar having a width in the x-direction greater than the width of the at least one via structure; and

(ii) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell;

wherein a ratio of an acoustic impedance of the higher acoustic impedance structure to an acoustic impedance of the lower acoustic impedance material is greater than 1.0; and

wherein the phononic crystal suppresses phononic excitations in at least one frequency band, thereby providing at least one phononic bandgap.

2. The device of claim 1, wherein the higher acoustic impedance structure comprises at least one of tungsten, copper, or molybdenum.

3. The device of claim 1, wherein the higher acoustic impedance structure comprises at least one via structure comprising tungsten.

4. The device of claim 1, wherein the lower acoustic impedance material is a dielectric material.

5. The device of claim 4, wherein the dielectric material comprises SiCOH, a phosphosilicate glass, an oxide or a nitride of aluminum, silicon, germanium, gallium, indium, tin, antimony, tellurium, bismuth, titanium, vanadium, chromium, manganese, cobalt, nickel, copper, zinc, zirconium, niobium, molybdenum, palladium, cadmium, hafnium, tantalum, or tungsten, or any combination thereof.

6. The device of claim 1, wherein the lower acoustic impedance material comprises a parylene, a polyvinylphenol, a polyvinylalchohol, a polythienylene vinylene, a functionalized pentacene, a polydimethylsiloxane, or any combination thereof.

7. The device of claim 1, wherein the lower acoustic impedance material comprises at least one longitudinal rectangular structure comprising aluminum.

8. The device of claim 1, wherein the phononic crystal comprises at least one layer of the unit cells, formed in a one-dimensional arrangement of the plurality of the unit cells.

9. The device of claim 1, wherein the phononic crystal comprises at least one layer of the unit cells, each layer comprising a periodic, two-dimensional arrangement of the plurality of the unit cells.

10. The device of claim 1, wherein the at least one higher acoustic impedance structure comprises at least one longitudinal bar, and wherein the at least one longitudinal bar has a square-shaped cross-section, a rectangular-shaped cross-section, a hexagonal-shaped cross-section, or other polygonal-shaped cross-section.

11. The device of claim 10, wherein the at least one higher acoustic impedance structure comprises at least one via structure and at least one longitudinal bar, and wherein the at least one higher acoustic impedance structure is formed as a connected-H-shaped structure, a connected-I-shaped structure, a staggered-I-shaped structure, or a Z-shaped structure.

12. The device of claim 1, wherein the substrate comprises silicon, a SOI technology substrate, gallium arsenide, gallium phosphide, gallium nitride, or indium phosphide.

13. The device of claim 1, further comprising at least one acoustic Bragg reflector structure disposed proximate to the resonant cavity.

14. The device of claim 1, wherein the acoustic resonant cavity comprises at least one field-effect transistor or at least one capacitor.

15. The device of claim 14, wherein the acoustic resonant cavity comprises at least two field-effect transistors, and wherein at least one of the at least two field-effect transistors comprises a drive gate or a sensing gate.

16. The device of claim 1, further comprising a drive mechanism coupled to the resonant cavity, wherein the drive mechanism comprises a metal-insulator-metal (MIM) capacitor, a gate of a metal-oxide-semiconductor field-effect transistor (MOSFET), a p-n junction of a diode, a capacitor, or a bipolar junction transistor.

17. The device of claim 1, wherein a coupling of the phononic crystal to the acoustic resonant cavity facilitates confinement in the acoustic resonant cavity of at least one phononic excitation at a frequency in the at least one frequency band.

18. The device of claim 1, wherein the at least one higher acoustic impedance structure comprises at least one via structure and at least one longitudinal bar, and wherein the at least one longitudinal bar has a first width in the x-direction, thereby generating an acoustic bandgap device having a first bandgap.

19. The device of claim 18, wherein a second acoustic bandgap device having the at least one longitudinal bar with a second width in the x-direction has a second bandgap that is wider than the first bandgap.

20. The device of claim 1, wherein the semiconductor fabrication tool is a 0.35 μ

m complementary metal-oxide-semiconductor (CMOS) fabrication tool, a 0.25 μ

m CMOS fabrication tool, a 0.18 μ

m CMOS fabrication tool, a 0.13 μ

m CMOS fabrication tool, a 65 nm CMOS fabrication tool, a 45 nm CMOS fabrication tool, a 32 nm CMOS fabrication tool, a 22 nm CMOS fabrication tool, a 65 nm silicon-on-insulator (SOI) fabrication tool, a 45 nm SOI fabrication tool, a 32 nm SOI fabrication tool, a 22 nm SOI fabrication tool, a 14 nm FinFET fabrication tool, a 22 nm FinFET fabrication tool, or a III-V semiconductor fabrication tool.

21. The device of claim 1, wherein the acoustic resonant cavity is fabricated on a portion of the substrate.

22. The device of claim 1, wherein an insulator layer is disposed between a portion of the acoustic resonant cavity and the substrate.

23. At least one radio-frequency micro-electro-mechanical structure (RF MEMS) device comprising at least one acoustic bandgap device of claim 1.

24. A wireless communication device comprising the at least one RF MEMS device of claim 23.

25. A microprocessor comprising the at least one RF MEMS device of claim 23.

26. A method of producing an acoustic bandgap device formed using a semiconductor fabrication tool, the semiconductor fabrication tool having a minimal feature thickness and an allowable via width based on a design rule check of the semiconductor fabrication tool, the method comprising:

fabricating an acoustic resonant cavity over a substrate lying in an x-y plane defining an x-direction and a y-direction;

fabricating a phononic crystal over the acoustic resonant cavity using a method comprising;

(i) generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement, each unit cell comprising;

a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, the at least one higher acoustic impedance structure comprising at least one of;

at least one via structure, each via structure having a width in the x-direction about equal to an allowable via width of the semiconductor fabrication tool; and

at least one longitudinal bar, each longitudinal bar having a width in the x-direction greater than the width of the at least one via structure; and

b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell;

wherein a ratio of an acoustic impedance of the higher acoustic impedance structure to an acoustic impedance of the lower acoustic impedance material is greater than 1.0; and

wherein the phononic crystal suppresses phononic excitations in at least one frequency band, thereby providing at least one phononic bandgap.

27. The method of claim 26, wherein the at least one higher acoustic impedance structure comprises at least one via structure and at least one longitudinal bar, and wherein the at least one longitudinal bar has a first width in the x-direction, thereby generating an acoustic bandgap device having a first bandgap.

28. The method of claim 27, further comprising generating the at least one longitudinal bar with a second width in the x-direction greater than the first width, thereby generating an acoustic bandgap device having a second bandgap wider than the first bandgap.

29. The method of claim 26, wherein the semiconductor fabrication tool is a 0.35 μ

m complementary metal-oxide-semiconductor (CMOS) fabrication tool, a 0.25 μ

m CMOS fabrication tool, a 0.18 μ

m CMOS fabrication tool, a 0.13 μ

m CMOS fabrication tool, a 65 nm CMOS fabrication tool, a 45 nm CMOS fabrication tool, a 32 nm CMOS fabrication tool, a 22 nm CMOS fabrication tool, a 65 nm silicon-on-insulator (SOI) fabrication tool, a 45 nm SOI fabrication tool, a 32 nm SOI fabrication tool, a 22 nm SOI fabrication tool, a 14 nm FinFET fabrication tool, a 22 nm FinFET fabrication tool, or a III-V semiconductor fabrication tool.

30. The method of claim 26, wherein the acoustic resonant cavity is fabricated on a portion of the substrate.

31. The method of claim 26, wherein an insulator layer is disposed between a portion of the acoustic resonant cavity and the substrate.