POWER SEMICONDUCTOR MODULE COMPRISING MODULE-INTERNAL LOAD AND AUXILIARY CONNECTION DEVICES OF LOW-INDUCTANCE CONFIGURATION

• US 20150237727A1
• Filed: 02/18/2015
• Published: 08/20/2015
• Est. Priority Date: 02/18/2014
• Status: Active Grant

• Current Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Original Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Inventors: Faller, Eduard, Spang, Matthias, Reuer, Lars
• Granted Patent: US 9,591,755 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/4846 with multiple bonds on the same bonding area
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/49 wire-like arrangements or pins or rods using optical fibres H01L23/48; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 23/5386 Geometry or layout of the interconnection structure
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/07 the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H05K 1/0228 : Compensation of cross-talk by a mutually correlated lay-out of printed circuit traces, e.g. for compensation of cross-talk in mounted connectors balanced signal pairs H05K1/0245
• CPC Class Codes: H05K 1/025 : Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance H05K1/024 and H05K1/0243 take precedence; for semiconductor devices H01L23/66
• CPC Class Codes: H05K 1/111 : Pads for surface mounting, e.g. lay-out
• CPC Class Codes: H05K 2201/09236 : Parallel layout layout of balanced signal pairs H05K1/0245; superposed layout H05K2201/09672
• CPC Class Codes: H05K 2201/09781 : Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
• CPC Class Codes: H05K 2201/0979 : Redundant conductors or connections, i.e. more than one current path between two points
• CPC Class Codes: H05K 2201/10053 : Switch
• CPC Class Codes: H05K 2201/10166 : Transistor
• CPC Class Codes: H05K 2201/10174 : Diode

Abstract

A power semiconductor module comprising internal load and auxiliary connection devices embodied as wire bonding connections. A substrate has a plurality of load and auxiliary potential areas, wherein a power switch is arranged on a first load potential area, said power switch being embodied as a plurality of controllable power subswitches arranged in series. The power subswitches have a load bonding connection consisting of a plurality of load bonding wires to a second load potential area, wherein a first bonding base is arranged on the second load potential area and an adjacent second bonding base of the respective load bonding wire is arranged on a contact area of the power subswitch.

Claims

1. A power semiconductor module having load and auxiliary terminal elements including module-internal load and auxiliary connection devices of low-inductance configuration having a substrate with a plurality of load and auxiliary potential areas,

wherein the power semiconductor module comprises:

a first and second load potential areas;

a power switch disposed on said first load potential area, said power switch being embodied as a plurality of controllable power subswitches which are arranged in series and each having

a respective contact area; and

an assigned load bonding connection which includes a plurality of parallel-arranged load bonding wires that connect to said second load potential area, each of said load bonding wires having

a first bonding base disposed on said second load potential area; and

a second bonding base adjacent to said first bonding base, disposed on the contact area of the one of said plurality of power subswitches of which said second bonding base is a part;

a control bonding wire for electrically connecting two of said auxiliary potential areas to one another; and

a parallel bonding wire disposed parallel to said control bonding wire, said parallel bonding wire being electrically connected to only one of said load potential areas.

2. The power semiconductor module of claim 1, wherein

the respective first bonding bases of a plurality of said assigned load bonding wires of said power subswitches which are not arranged centrally in said series are arranged in a manner offset from a straight course of said assigned load bonding wire, said straight course being perpendicular to an edge of said respective power subswitch, towards the center of said series of said power subswitches.

3. The power semiconductor module of claim 2, wherein

said second load potential area has a current flow direction and the length of those bonding wire sections of said load bonding wires from said first bonding base to said nearest second bonding base increases from one power subswitch to said power subswitch that is adjacent thereto in said current flow direction.

4. The power semiconductor module of claim 1, wherein

said second load potential area has a current flow direction and the length of those bonding wire sections of said load bonding wires from said first bonding base to said nearest second bonding base increases from one power subswitch to said power subswitch that is adjacent thereto in said current flow direction.

5. The power semiconductor module of claim 1, wherein

all first bonding bases of said assigned load bonding wires are arranged in a manner offset towards said center of said series of said power subswitches.

6. The power semiconductor module of claim 1, wherein

a controllable power sub switch is embodied as a field effect transistor.

7. The power semiconductor module of claim 6, wherein

said field effect transistor is a MOS-FET.

8. The power semiconductor module of claim 1, wherein

a controllable power subswitch is embodied as a bipolar transistor with a freewheeling diode reverse-connected in parallel.

9. The power semiconductor module of claim 8, wherein

said bipolar transistor is an IGBT.

10. The power semiconductor module of claim 1, wherein

a load potential area has a positive DC voltage potential.

11. The power semiconductor module of claim 1, wherein

a load potential area has a negative DC voltage potential.

12. The power semiconductor module of claim 1, wherein

a load potential area has an AC voltage potential.

13. The power semiconductor module of claim 1, wherein

an auxiliary potential area has a drive potential.

14. The power semiconductor module of claim 1, wherein

a parallel bonding wire has a length of from about 80% to about 120% of said assigned control bonding wire.

15. The power semiconductor module of claim 14, wherein

said parallel bonding wire has a length of from about 90% to about 110% of said assigned control bonding wire.

16. The power semiconductor module of claim 1, wherein

When the potential differences between the potential of said control bonding wire and that of said parallel bonding wire is low, both are arranged as closely adjacent to one another as permitted by the mechanical boundary conditions of the substrate.

17. The power semiconductor module of claim 1, wherein

a parallel bonding wire is maximally at a distance from said assigned control bonding wire of about 1.5 times the minimum safety distance.

18. A power semiconductor module having load and auxiliary terminal elements including module-internal load and auxiliary connection devices of low-inductance configuration having a substrate with a plurality of load and auxiliary potential areas,

wherein the power semiconductor module comprises:

a first and second load potential areas; and

a power switch disposed on said first load potential area, said power switch being embodied as a plurality of controllable power subswitches which are arranged in series and each having

a respective contact area; and

an assigned load bonding connection which includes a plurality of parallel-arranged load bonding wires that connect to said second load potential area, each of said load bonding wires having

a first bonding base disposed on said second load potential area; and

a second bonding base adjacent to said first bonding base, disposed on the contact area of the one of said plurality of power subswitches of which said second bonding base is a part;

wherein the respective first bonding bases of a plurality of said assigned load bonding wires of said power subswitches which are not arranged centrally in said series are arranged in a manner offset from a straight course of said assigned load bonding wire, said straight course being perpendicular to an edge of said respective power subswitch, towards the center of said series of said power subswitches.

19. The power semiconductor module of claim 18, wherein

said second load potential area has a current flow direction and the length of those bonding wire sections of said load bonding wires from said first bonding base to said nearest second bonding base increases from one power subswitch to said power subswitch that is adjacent thereto in said current flow direction.

20. A power semiconductor module having load and auxiliary terminal elements including module-internal load and auxiliary connection devices of low-inductance configuration having a substrate with a plurality of load and auxiliary potential areas,

wherein the power semiconductor module comprises:

a first and second load potential areas; and

a power switch disposed on said first load potential area, said power switch being embodied as a plurality of controllable power subswitches which are arranged in series and each having

a respective contact area; and

an assigned load bonding connection which includes a plurality of parallel-arranged load bonding wires that connect to said second load potential area, each of said load bonding wires having

a first bonding base disposed on said second load potential area; and

a second bonding base adjacent to said first bonding base, disposed on the contact area of the one of said plurality of power subswitches of which said second bonding base is a part;

wherein said second load potential area has a current flow direction and the length of those bonding wire sections of said load bonding wires from said first bonding base to said nearest second bonding base increases from one power subswitch to said power subswitch that is adjacent thereto in said current flow direction.