ETCHING METHOD
First Claim
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1. An etching method of etching a region formed of silicon oxide, the etching method comprising:
- an exposing process of exposing a target object including the region to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and
an etching process of etching the region with a radical of the fluorocarbon contained in the deposit,wherein the exposing process of exposing the target object to the plasma of the processing gas containing the fluorocarbon gas and the etching process of etching the region with the radical of the fluorocarbon are alternately repeated.
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Abstract
An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including the region formed of the silicon oxide to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and an etching process (process (b)) of etching the region with a radical of the fluorocarbon contained in the deposit. Further, in the method, the process (a) and the process (b) are alternately repeated.
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Citations
5 Claims
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1. An etching method of etching a region formed of silicon oxide, the etching method comprising:
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an exposing process of exposing a target object including the region to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and an etching process of etching the region with a radical of the fluorocarbon contained in the deposit, wherein the exposing process of exposing the target object to the plasma of the processing gas containing the fluorocarbon gas and the etching process of etching the region with the radical of the fluorocarbon are alternately repeated. - View Dependent Claims (2, 3, 4, 5)
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Specification