SEMICONDUCTOR DEVICE
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Abstract
A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n−-drift layer. An interlayer insulating film covers the gate electrode. An Al source electrode extends on the interlayer insulating film. An Al gate pad is connected to the gate electrode. A barrier metal layer that prevents diffusion of aluminum is interposed between the source electrode and the interlayer insulating film, and between the gate pad and the gate electrode.
10 Citations
21 Claims
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1. (canceled)
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2. A semiconductor device, comprising:
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a main transistor cell with a gate insulating film formed on a silicon carbide semiconductor layer, a gate electrode formed on said gate insulating film, and a source region that is an impurity region formed in an upper portion of said semiconductor layer; an interlayer insulating film covering said gate electrode; a source electrode connected to said source region while extending on said interlayer insulating film; a gate pad connected to said gate electrode; a barrier metal layer interposed between said source electrode and said interlayer insulating film, and between said gate pad and said gate electrode, said barrier metal layer formed both on said source region and under said gate pad, said barrier metal layer contacting a surface of said interlayer insulating film; a temperature sensing diode formed on said semiconductor layer and including a p-type polysilicon and an n-type polysilicon; an anode electrode connected to said p-type polysilicon; and a cathode electrode connected to said n-type polysilicon, wherein said barrier metal layer is also interposed between said p-type polysilicon and said anode electrode as well as between said n-type polysilicon and said cathode electrode. - View Dependent Claims (3, 12, 15, 18)
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4. A semiconductor device, comprising:
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a main transistor cell with a gate insulating film formed on a silicon carbide semiconductor layer, a gate electrode formed on said gate insulating film, and a source region that is an impurity region formed in an upper portion of said semiconductor layer; an interlayer insulating film covering said gate electrode; a source electrode connected to said source region while extending on said interlayer insulating film; a gate pad connected to said gate electrode; and a barrier metal layer interposed between said source electrode and said interlayer insulating film, and between said gate pad and said gate electrode, said barrier metal layer formed both on said source region and under said gate pad, said barrier metal layer contacting a surface of said interlayer insulating film, wherein said barrier metal layer includes Ti. - View Dependent Claims (5, 6, 7, 8, 13, 16, 19, 21)
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9. A semiconductor device, comprising:
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a main transistor cell with a gate insulating film formed on a silicon carbide semiconductor layer, a gate electrode formed on said gate insulating film, and a source region that is an impurity region formed in an upper portion of said semiconductor layer; an interlayer insulating film covering said gate electrode; a source electrode connected to said source region while extending on said interlayer insulating film; a gate pad connected to said gate electrode; and a barrier metal layer interposed between said source electrode and said interlayer insulating film, and between said gate pad and said gate electrode, said barrier metal layer formed both on said source region and under said gate pad, said barrier metal layer contacting a surface of said interlayer insulating film wherein; a thickness of the barrier metal layer is greater than or equal to 40 nm. - View Dependent Claims (10, 11, 14, 17, 20)
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Specification