LIGHT EMITTING DEVICE INCLUDING SHAPED SUBSTRATE

• US 20150243842A1
• Filed: 09/05/2013
• Published: 08/27/2015
• Est. Priority Date: 09/17/2012
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Koninklijke Philips N.V.
• Inventors: Bhat, Jerome Chandra, Butterworth, Mark Melvin
• Granted Patent: US 10,326,051 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02587 Structure
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

Embodiments of the invention include a semiconductor structure (23) including a light emitting layer. A substrate (10) comprising lithium is attached to the semiconductor structure (23). A surface of the substrate (10) forms an angle with a major plane of the semiconductor structure (23) that is between 60° and 75°.

Claims

1. A device comprising:

a substrate comprising lithium having a first side and a second side, the semiconductor structure; and

a semiconductor structure comprising a light emitting layer disposed on the first side,

wherein at least a portion of the second side forms an angle with a major plane of the semiconductor structure that is between 60° and

75°

.

2. The device of claim 1 wherein at least a portion of the second side of the substrate is shaped into at least one pyramid.

3. The device of claim 1 wherein at least a portion of the second side is shaped into at least one truncated pyramid.

4. The device of claim 3 further comprising intersecting notches formed in the truncated pyramid, wherein the intersecting notches have side walls that form an angle with a major plane of the semiconductor structure that is between 60°

and 75°

.

5. The device of claim 1 wherein the substrate is (LiNb_aTa_1-aO₃) where 0≦

a≦

1.

6. The device of claim 1 wherein the second side is part of a feature formed in the substrate, wherein a plurality of features are formed over a portion of the light emitting layer corresponding to a single light emitting device.

7. The device of claim 1 further comprising a wavelength converting layer disposed over the second surface.

8. A method comprising:

providing a substrate comprising lithium having a first side and a second side, wherein a semiconductor structure comprising a light emitting layer is disposed on the first side; and

shaping the second side to form a surface disposed at an acute angle relative to a major plane of the semiconductor structure.

9. The method of claim 8 wherein the second side is angled between 60°

and 75°

relative to a major plane of the semiconductor structure.

10. The method of claim 8 wherein providing a substrate comprising lithium attached to a semiconductor structure comprising a light emitting layer comprises growing the semiconductor structure on the substrate comprising lithium.

11. The method of claim 8 wherein providing a substrate comprising lithium disposed upon a semiconductor structure comprising a light emitting layer comprises:

growing the semiconductor structure on a growth substrate; and

after said growing, bonding the semiconductor structure to the substrate comprising lithium.

12. The method of claim 8 wherein shaping comprises sawing.

13. The method of claim 8 wherein shaping comprises etching.

14. The method of claim 8 wherein shaping comprises forming at least one pyramid.

15. The method of claim 8 wherein the substrate is one of (LiNb_aTa_1-aO₃) where 0≦

a≦

1, LiN_bO₃, LiTaO₃, and LiVO₃.

16. The method of claim 8 further comprising disposing a wavelength converting layer over the substrate.