PLASMA PROCESSING APPARATUS

• US 20150248994A1
• Filed: 08/20/2014
• Published: 09/03/2015
• Est. Priority Date: 02/28/2014
• Status: Abandoned Application

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: TANDOU, Takumi, SATO, Kohei, KAWASAKI, Hiromichi, MAKINO, Akitaka
• Application Number:
  US14/463,685
• Publication Number:
  US 20150248994A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32678 Electron cyclotron resonance
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

A plasma processing apparatus, comprising a processing chamber within a vacuum chamber, and a sample stage arranged within the processing chamber with a sample to be processed placed on its top surface, wherein plasma is formed in the processing chamber to perform processing of the sample, wherein the sample stage is provided with an electrostatic chuck which is provided with film electrodes to which power for attraction of the sample is supplied, and upper and lower plate-like sintered bodies joined mutually with the electrodes interposed between them from above and below, and the lower sintered body has a dielectric constant higher than that of the upper sintered body.

Claims

1. A plasma processing apparatus, comprising:

a processing chamber arranged within a vacuum chamber with its inner space decompressed, and a sample stage arranged within the processing chamber with a sample to be processed placed on its top surface, wherein plasma is formed using a process gas supplied into the processing chamber above the sample stage to perform processing of the sample, wherein;

the sample stage is provided with a metal block which has therein a passage for flowing a coolant and to which high frequency power is supplied during the processing of the sample and an electrostatic chuck which is arranged on the block and on which the sample is positioned and electrostatically chucked, and

the electrostatic chuck is provided with film electrodes to which power for attraction of the sample is supplied, and upper and lower plate-like sintered bodies joined mutually with the electrodes interposed between them from above and below, and the lower sintered body has a dielectric constant higher than that of the upper sintered body.

2. The plasma processing apparatus according to claim 1, wherein the upper sintered body has a volume resistivity larger than that of the lower sintered body.

3. The plasma processing apparatus according to claim 1, wherein the lower sintered body has a thickness larger than that of the upper sintered body.

4. The plasma processing apparatus according to claim 1, wherein the upper sintered body is formed of pure ceramics.

5. The plasma processing apparatus according to claim 1, comprising

a film heater arranged above the block and below the electrostatic chuck, and a plate-like member arranged above the heater and below the electrostatic chuck in a state insulated from the block, and having a diameter larger than the heater and heat conductance.

6. The plasma processing apparatus according to claim 5, wherein the heater is arranged within an insulation layer which is arranged in a state interposed between the plate-like member and the top surface of the block.