CHIP DIODE AND DIODE PACKAGE

• US 20150249055A1
• Filed: 05/05/2015
• Published: 09/03/2015
• Est. Priority Date: 10/17/2011
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: YAMAMOTO, Hiroki
• Granted Patent: US 9,385,093 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2223/54413 comprising digital information, e.g. bar codes, data matrix
• CPC Class Codes: H01L 2223/54433 containing identification or tracking information
• CPC Class Codes: H01L 2223/54473 for use after dicing
• CPC Class Codes: H01L 2223/54493 Peripheral marks on wafers, e.g. orientation flats, notches, lot number
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/11009 for protecting parts during manufacture
• CPC Class Codes: H01L 2224/11464 Electroless plating
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16245 : the item being metallic
• CPC Class Codes: H01L 2224/291 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/45015 : being circular
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 23/49551 : characterised by bent parts
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/5223 : Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5228 : Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 23/544 : Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 23/562 : Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 27/0255 : using diodes as protective elements
• CPC Class Codes: H01L 27/0629 : in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/067 : Lateral bipolar transistor in combination with diodes, or capacitors, or resistors
• CPC Class Codes: H01L 27/0722 : in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
• CPC Class Codes: H01L 27/1021 : including diodes only
• CPC Class Codes: H01L 28/10 : Inductors
• CPC Class Codes: H01L 28/20 : Resistors
• CPC Class Codes: H01L 28/24 : with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
• CPC Class Codes: H01L 28/40 : Capacitors
• CPC Class Codes: H01L 29/0615 : by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0619 : with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0692 : Surface layout
• CPC Class Codes: H01L 29/417 : carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/66136 : PN junction diodes
• CPC Class Codes: H01L 29/861 : Diodes
• CPC Class Codes: H01L 29/8611 : Planar PN junction diodes
• CPC Class Codes: H01L 29/866 : Zener diodes
• CPC Class Codes: H01L 29/872 : Schottky diodes
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12035 : Zener diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

[Theme] To provide a chip diode, with which a p-n junction formed on a semiconductor layer can be prevented from being destroyed and fluctuations in characteristics can be suppressed even when a large stress is applied to a pad for electrical connection with the exterior, and a diode package that includes the chip diode.

[Solution] A chip diode 15 includes an epitaxial layer 21 with a p-n junction 28, constituting a diode element 29, formed therein, an anode electrode 34 disposed along a top surface 22 of the epitaxial layer 21, electrically connected to a diode impurity region 23, which is the p-side pole of the p-n junction 28, and having a pad 37 for electrical connection with the exterior, and a cathode electrode 41 electrically connected to the epitaxial layer 21, which is the n-side pole of the p-n junction 28, and the pad 37 is provided at a position separated from a position directly above the p-n junction 28.

Claims

1. A chip diode including a plurality of diode cells formed on a semiconductor substrate and parallel connection portions provided on the semiconductor substrate and connecting the plurality of diode cells in parallel.

2. The chip diode according to claim 1, wherein each of the plurality of diode cells has an individual diode junction region.

3. The chip diode according to claim 2, wherein each of the diode junction regions is a p-n junction region.

4. The chip diode according to claim 3, wherein the semiconductor substrate is constituted of a semiconductor of a first conductivity type and each diode cell has a region of a second conductivity type formed on the semiconductor substrate.

5. The chip diode according to claim 4, wherein the parallel connection portions include a first electrode that is in common contact with the regions of the second conductivity type provided respectively in the plurality of diode cells and further include a second electrode electrically connected to the semiconductor substrate.

6. The chip diode according to claim 5, further including a first conductivity type region formed on the semiconductor substrate and having a higher impurity concentration than the semiconductor substrate,

wherein the second electrode is bonded to the first conductivity type region.

7. The chip diode according to claim 2, wherein each of the diode junction regions is a Schottky junction region.

8. The chip diode according to claim 7, wherein the parallel connection portions include a first electrode having a Schottky metal in contact with the Schottky junction regions of the plurality of diode cells and in Schottky junction with the respective Schottky junction regions, and a second electrode electrically connected to the semiconductor substrate.

9. The chip diode according to claim 5, wherein the first electrode and the second electrode are formed on one of the surfaces of the semiconductor substrate.

10. The chip diode according to claim 6, wherein the first electrode and the second electrode are formed on one of the surfaces of the semiconductor substrate.

11. The chip diode according to claim 8, wherein the first electrode and the second electrode are formed on one of the surfaces of the semiconductor substrate.

12. The chip diode according to claim 2, wherein the diode junction regions of the plurality of diode cells are formed to be equal in size.

13. The chip diode according to claim 2, wherein each diode junction region is a polygonal region.

14. The chip diode according to claim 1, wherein the plurality of diode cells are formed to be equal in size.

15. The chip diode according to claim 1, wherein the plurality of diode cells are arrayed two-dimensionally at equal intervals.

16. The chip diode according to claim 1, wherein not less than four of the diode cells are provided.