Optoelectronic Component and Method for Producing an Optoelectronic Component

• US 20150249072A1
• Filed: 05/22/2013
• Published: 09/03/2015
• Est. Priority Date: 06/27/2012
• Status: Abandoned Application

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Herrmann, Siegfried
• Application Number:
  US14/408,952
• Publication Number:
  US 20150249072A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 25/165 Containers
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/866 Zener diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

An optoelectronic component includes an electrically insulating connection carrier constructed in a multipartite fashion. The connection carrier has at least one ceramic layer and a silicon layer. The silicon layer has an electrically conductive layer on the top side of the silicon layer facing away from the ceramic layer. A light-emitting diode is electrically conductively and mechanically connected to the connection carrier via the electrically conductive layer. A method for producing an optoelectronic component is furthermore specified.

Claims

1-15. -15. (canceled)

16. An optoelectronic component, comprising:

an electrically insulating connection carrier constructed in a multipartite fashion, wherein the connection carrier includes a ceramic layer and a silicon layer;

an electrically conductive layer on a top side of the silicon layer facing away from the ceramic layer; and

a light-emitting diode electrically conductively and mechanically connected to the connection carrier via the electrically conductive layer.

17. The optoelectronic component according to claim 16, wherein the ceramic layer and the silicon layer are connected to one another without any connecting medium.

18. The optoelectronic component according to claim 16, wherein the connection carrier has an n-side connection location and a p-side connection location arranged at an underside of the ceramic layer facing away from the silicon layer.

19. The optoelectronic component according to claim 18, wherein the connection locations are each electrically conductively connected to the light-emitting diode by a plated-through hole.

20. The optoelectronic component according to claim 19, wherein each plated-through hole has vertically separated perforations that are electrically insulated, and wherein the perforations completely penetrate through the silicon layer and the ceramic layer.

21. The optoelectronic component according to claim 18, wherein the electrically conductive layer is electrically conductively connected to the n-side connection location in a first region, and is electrically conductively connected to the p-side connection location in a second region, and wherein the first region and the second region of the electrically conductive layer are electrically insulated from one another.

22. The optoelectronic component according to claim 16, further comprising a protective diode attached to the connection carrier.

23. The optoelectronic component according to claim 22, wherein the protective diode is electrically insulated from the connection carrier.

24. The optoelectronic component according to claim 22, wherein the protective diode is integrated in the silicon layer.

25. The optoelectronic component according to claim 22, wherein the ceramic layer forms a varistor, and wherein the varistor and the light-emitting diode are connected in parallel.

26. The optoelectronic component according to claim 16, wherein the ceramic layer comprises a plurality of ceramic plies.

27. The optoelectronic component according to claim 26, wherein the ceramic layer has a redistribution wiring layer arranged between two ceramic plies of the ceramic layer or between the silicon layer and that ply of the ceramic layer that faces the silicon layer.

28. The optoelectronic component according to claim 27, further comprising a protective diode that is connected via the redistribution wiring layer in the ceramic layer.

29. A method for producing an optoelectronic component, the method comprising:

providing an electrically insulating connection carrier comprising a ceramic layer and a silicon layer; and

arranging a light-emitting diode on the connection carrier, wherein the light-emitting diode is electrically conductively connected to an electrically conductive layer that is located on a top side of the silicon layer facing away from the ceramic layer.

30. The method according to claim 29, further comprising removing a growth substrate of the light-emitting diode.

31. The method according to claim 29, further comprising sintering the ceramic layers, wherein the connection carrier is laminated before sintering the ceramic layer.

32. An optoelectronic component, comprising:

an electrically insulating connection carrier that is constructed in a multipartite fashion and includes a ceramic layer and a silicon layer, wherein the ceramic layer and the silicon layer are connected to one another in a manner free of connecting medium;

an electrically conductive layer on a top side of the silicon layer facing away from the ceramic layer;

a substrateless light-emitting diode electrically conductively and mechanically connected to the connection carrier via the electrically conductive layer, wherein the connection carrier and the light-emitting diode together form an optoelectronic semiconductor chip; and

a protective diode that is integrated in the silicon layer or the ceramic layer.