METHOD OF PATTERNING PILLARS

• US 20150251917A1
• Filed: 06/10/2014
• Published: 09/10/2015
• Est. Priority Date: 10/21/2013
• Status: Abandoned Application

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Ma, Jian, Hong, John Hyunchul, Wen, Bing, Chang, Tallis Young, Hong, Brandon John
• Application Number:
  US14/301,192
• Publication Number:
  US 20150251917A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B81C 1/00031 Regular or irregular arrays of nanoscale structures, e.g. etch mask layer photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002
• CPC Class Codes: C01B 33/113 Silicon oxides; Hydrates thereof preparing monoxide by reduction of siliceous material C01B33/182
• CPC Class Codes: G02B 5/00 Optical elements other than lenses light guides G02B6/00; optical logic elements G02F3/00

Abstract

The disclosed technology relates to methods of patterning elongated structures. In one aspect, a method of forming pillars includes providing a substrate and providing a plurality of beads on a surface of the substrate. Regions of the surface without a directly overlying bead are exposed. The method additionally includes selectively etching the exposed regions of the substrate between the beads such that a plurality of pillars is formed under areas masked by the beads. Selectively etching completely removes at least some of the beads. The pillars that are not covered by beads are etched, thereby leaving some pillars taller than others, with the pillar height pending on the amount of time a pillar was left exposed to etchant by a removed bead.

Claims

1. A method of forming pillars, comprising:

providing a substrate;

providing a plurality of beads on a surface of the substrate, wherein regions of the surface without a directly overlying bead are exposed; and

selectively etching the exposed regions of the substrate between the beads such that a plurality of pillars is formed under areas masked by the beads,

wherein selectively etching completely removes at least some of the beads.

2. The method of claim 1, wherein the beads are substantially spherical.

3. The method of claim 2, wherein providing the beads includes providing the beads having diameters in a range between about 200 nm and about 600 nm.

4. The method of claim 1, further comprising:

shrinking the beads after providing the beads and prior to selectively etching, wherein at least some of the beads contact one another before shrinking, and wherein substantially all of the beads become separated from one another after shrinking.

5. The method of claim 4, wherein the beads include a polymeric material, and wherein shrinking the beads includes ashing the spherical beads using an oxidizing reactant.

6. The method of claim 1, wherein selectively etching removes the at least some of the beads that are completely removed while the exposed regions are being etched, such that a subset of the pillars corresponding to areas masked by the at least some of the beads have top pillar surfaces recessed substantially below an initial surface level of the substrate surface, thereby forming recessed pillars.

7. The method of claim 6, wherein the recessed pillars have pillar diameters smaller than an average diameter of the plurality of pillars.

8. The method of claim 7, wherein the pillars of the plurality of pillars have a difference in pillar heights ranging between about 1 nm and about 900 nm.

9. The method of claim 7, wherein the pillars of the plurality of pillars have a difference in pillar heights ranging between about 1 nm and about 210 nm.

10. The method of claim 1, wherein the substrate includes silicon.

11. The method of claim 10, wherein the beads include silicon dioxide.

12. The method of claim 10, wherein the substrate includes amorphous silicon.

13. The method of claim 10, further comprising oxidizing the pillars to form optically transmissive pillars including silicon dioxide.

14. The method of claim 1, wherein the pillars are spaced apart randomly, wherein a mean distance between a pillar and a closest adjacent pillar is between about 0.1 microns and about 0.5 microns.

15. The method of claim 1, further including filling spaces between adjacent pillars with a dielectric material.

16. The method of claim 15, wherein the dielectric material has a refractive index less than a refractive index of the pillar.

17. A method for forming pillars, comprising:

providing a substrate;

providing an etch mask on the surface of the substrate, the etch mask including a plurality of islands of masking material, wherein some of the islands have different widths than others of the island;

etching the substrate through the etch mask to form a plurality of pillars.

18. The method of claim 17, wherein the islands include at least one contact region between adjacent islands.

19. The method of claim 17, wherein the islands are formed by substantially spherical beads.

20. The method of claim 19, wherein the spherical beads form a monolayer of beads.

21. The method of claim 20, wherein the monolayer of beads is substantially close packed such that the spherical beads include at least four contact regions between adjacent beads.

22. The method of claim 17, wherein the widths of the islands are within a range between about 200 nm and about 600 nm.