MAGNETOELECTRIC DEVICE, METHOD FOR FORMING A MAGNETOELECTRIC DEVICE, AND WRITING METHOD FOR A MAGNETOELECTRIC DEVICE
First Claim
1. A magnetoelectric device comprising:
- a reference magnetic layer structure having a fixed magnetization orientation; and
a synthetic antiferromagnetic layer structure comprising a free magnetic layer structure and a coupling magnetic layer structureantiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable,wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other.
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Abstract
A magnetoelectric device is provided. The magnetoelectric device includes a reference magnetic layer structure having a fixed magnetization orientation, and a synthetic antiferromagnetic layer structure including a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable, wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method for forming a magnetoelectric device and a writing method for a magnetoelectric device are also provided.
36 Citations
20 Claims
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1. A magnetoelectric device comprising:
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a reference magnetic layer structure having a fixed magnetization orientation; and a synthetic antiferromagnetic layer structure comprising a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable, wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for forming a magnetoelectric device, the method comprising:
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forming a reference magnetic layer structure having a fixed magnetization orientation; forming a synthetic antiferromagnetic layer structure comprising a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable, wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. - View Dependent Claims (17)
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18. A writing method for a magnetoelectric device, the writing method comprising:
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determining a resistance state of the magnetoelectric device; and after determining the resistance state, applying a voltage to vary a magnetization orientation of a free magnetic layer structure of the magnetoelectric device from a first direction to a second direction different from the first direction, and to vary a magnetization orientation of a coupling magnetic layer structure of the magnetoelectric device from the second direction to the first direction, the free magnetic layer structure and the coupling magnetic layer structure being antiferromagnetically coupled to each other. - View Dependent Claims (19, 20)
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Specification