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REPLACEMENT FIN INSOLATION IN A SEMICONDUCTOR DEVICE

  • US 20150255456A1
  • Filed: 03/04/2014
  • Published: 09/10/2015
  • Est. Priority Date: 03/04/2014
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a set of replacement fins formed over a substrate, each of the set of replacement fins comprising a first section and a second section, the first section having a lower dopant centration than a dopant concentration of the second section; and

    a liner layer between the first section and the second section.

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