REPLACEMENT FIN INSOLATION IN A SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a set of replacement fins formed over a substrate, each of the set of replacement fins comprising a first section and a second section, the first section having a lower dopant centration than a dopant concentration of the second section; and
a liner layer between the first section and the second section.
4 Assignments
0 Petitions
Accused Products
Abstract
Embodiments herein provide approaches for forming a set of replacement fins in a semiconductor device. Specifically, a device is formed having a set of replacement fins over a substrate, each of the set of replacement fins comprising a first section separated from a second section by a liner layer, the first section having a lower dopant centration than a dopant concentration of the second section. In one embodiment, sequential epitaxial deposition with insitu doping is used to form the second section, the liner layer, and then the first section of each of the set of replacement fins. In another embodiment, the second section is formed over the substrate, and the liner layer is formed through a carbon implant. The first section is then epitaxially formed over the liner layer, and serves as the fin channel. As provided, upward dopant diffusion is suppressed, resulting in the first section of each fin being maintained with low doping so that the fin channel is fully depleted channel during device operation.
33 Citations
20 Claims
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1. A semiconductor device comprising:
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a set of replacement fins formed over a substrate, each of the set of replacement fins comprising a first section and a second section, the first section having a lower dopant centration than a dopant concentration of the second section; and a liner layer between the first section and the second section. - View Dependent Claims (2, 3, 4, 5)
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6. A method for forming a semiconductor device, the method comprising:
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forming a set of replacement fins over a substrate, each of the set of replacement fins comprising a first section and a second section, the first section having a lower dopant centration than a dopant concentration of the second section; and forming a liner layer between the first section from the second section. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A method for forming a set of replacement fins in a semiconductor device, the method comprising:
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forming a set of replacement fins over a substrate, each of the set of replacement fins comprising a first section and a second section, the first section having a lower dopant centration than a dopant concentration of the second section; and forming a liner layer between the first section from the second section. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification