SEMICONDUCTOR DEVICES AND SEMICONDUCTOR SYSTEMS INCLUDING THE SAME

• US 20150256153A1
• Filed: 08/26/2014
• Published: 09/10/2015
• Est. Priority Date: 03/05/2014
• Status: Active Grant

• Current Assignee: SK Hynix Inc.
• Original Assignee: SK Hynix Inc.
• Inventors: LIM, Hee Joon, HYUN, Sang Ah
• Granted Patent: US 9,337,808 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 5/147 Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops G11C5/141 takes precedence
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects
• CPC Class Codes: G11C 7/1063 Control signal output circuits, e.g. status or busy flags, feedback command signals
• CPC Class Codes: H03K 3/012 Modifications of generator to improve response time or to decrease power consumption

Abstract

A semiconductor system includes a controller and a semiconductor device. The controller receives a temperature code signal and responsively generates a mode set signal operable to adjust a level variation and a voltage variation rate of a temperature voltage signal, wherein the temperature voltage signal level varies according to temperature when a logic level combination of the temperature code signal is different from a predefined logic level combination. The semiconductor device generates the temperature voltage signal from a drivability and a resistance value set by the mode set signal. The semiconductor device generates the temperature code signal based on a comparison of the temperature voltage signal and a reference voltage signal.

Claims

1. A semiconductor system comprising:

a controller suitable for receiving a temperature code signal and responsively generating a mode set signal operable to adjust a level variation and a voltage variation rate of a temperature voltage signal, wherein the temperature voltage signal level varies according to temperature when a logic level combination of the temperature code signal is different from a predefined logic level combination; and

a semiconductor device suitable for generating the temperature voltage signal from a drivability and a resistance value set by the mode set signal and suitable for generating a temperature code signal based on a comparison of the temperature voltage signal and a reference voltage signal.

2. The semiconductor system of claim 1,

wherein the level variation of the temperature voltage signal is adjusted based on the drivability;

and

wherein the voltage variation rate of the temperature voltage signal is adjusted based on the resistance value.

3. The semiconductor system of claim 1, wherein the semiconductor device comprises:

a temperature sensor suitable for adjusting the drivability and the resistance value of the temperature sensor in response to the mode set signal to generate the temperature voltage signal and to generate the reference voltage signal having a relatively constant voltage level;

a code generator suitable for generating a code signal based on a comparison of the temperature voltage signal and the reference voltage signal;

a register suitable for storing the code signal and suitable for outputting the code signal as an internal code signal; and

an output buffer suitable for generating a buffered internal code signal as the temperature code signal.

4. The semiconductor system of claim 3,

wherein the mode set signal comprises a first mode set signal, a second mode set signal and a third mode set signal;

and

wherein the temperature sensor comprises;

a control signal generator suitable for decoding the first, second and third mode set signals to generate first, second, third and fourth control signals;

a drive signal generator suitable for generating a drive signal having a relatively constant level regardless of temperature variation;

a reference voltage generator suitable for generating the reference voltage signal in response to the drive signal; and

a temperature voltage generator suitable for adjusting the drivability and the resistance value of the temperature voltage generator in response to the drive signal and the first, second, third and fourth control signals to generate the temperature voltage signal.

5. The semiconductor system of claim 4, wherein the temperature voltage generator comprises:

a first pre-temperature voltage generator suitable for adjusting a drivability of the first pre-temperature voltage generator in response to the first and second control signals to generate a first pre-temperature voltage signal having a level that varies according to temperature and suitable for outputting the first pre-temperature voltage signal as the temperature voltage signal in response to the third control signal; and

a second pre-temperature voltage generator suitable for adjusting a drivability of the second pre-temperature voltage generator in response to the first and second control signals to generate a second pre-temperature voltage signal having a level that varies according to temperature and suitable for outputting the second pre-temperature voltage signal as the temperature voltage signal in response to the fourth control signal.

6. The semiconductor system of claim 5, wherein the first pre-temperature voltage generator comprises:

a first pull-up driver suitable for pulling up a first node in response to the drive signal, a drivability of the first pull-up driver to pull up the first node being adjusted controlled according to a logic level combination of the first and second control signals; and

a first resistance controller suitable for generating the first pre-temperature voltage signal according to resistance values of first and second temperature elements, wherein the first and second temperature elements are electrically coupled in series between the first node and a ground voltage terminal and suitable for outputting the first pre-temperature voltage signal as the temperature voltage signal when the third control signal is enabled.

7. The semiconductor system of claim 6, wherein the first pull-up driver comprises:

a first driver suitable for pulling up the first node in response to the drive signal;

a second driver suitable for pulling up the first node in response to the drive signal when the first control signal is enabled; and

a third driver suitable for pulling up the first node in response to the drive signal when the second control signal is enabled.

8. The semiconductor system of claim 6,

wherein the first resistance controller comprises the first temperature element, the second temperature element and a first switch element;

wherein the first temperature element is electrically coupled between the first node and a second node, wherein the first pre-temperature voltage signal is output via the second node, and a gate of the first temperature element is electrically coupled to the first node;

wherein the second temperature element is electrically coupled between the second node and the ground voltage terminal, and a gate of the second temperature element is electrically coupled to the first node; and

wherein the first switch element outputs the first pre-temperature voltage signal as the temperature voltage signal when the third control signal is enabled.

9. The semiconductor system of claim 5, wherein the second pre-temperature voltage generator comprises:

a second pull-up driver suitable for pulling up a third node in response to the drive signal, a drivability of the second pull-up driver to pull up the third node being adjusted according to a logic level combination of the first and second control signals; and

a second resistance controller suitable for generating the second pre-temperature voltage signal based on resistance values of third and fourth temperature elements, wherein the third and fourth temperature elements are electrically coupled in series between the third node and a ground voltage terminal and suitable for outputting the second pre-temperature voltage signal as the temperature voltage signal when the fourth control signal is enabled.

10. The semiconductor system of claim 9, wherein the second pull-up driver comprises:

a fourth driver suitable for pulling up the third node in response to the drive signal;

a fifth driver suitable for pulling up the third node in response to the drive signal when the first control signal is enabled; and

a sixth driver suitable for pulling up the third node in response to the drive signal when the second control signal is enabled.

11. The semiconductor system of claim 9,

wherein the second resistance controller comprises the third temperature element, the fourth temperature element and a second switch element;

wherein the third temperature element is electrically coupled between the third node and a fourth node, wherein the second pre-temperature voltage signal is output via the fourth node, and a gate of the third temperature element is electrically coupled to the third node;

wherein the fourth temperature element is electrically coupled between the fourth node and a second node, wherein the first pre-temperature voltage signal is output via the second node, and a gate of the fourth temperature element is electrically coupled to the third node; and

wherein the second switch element outputs the second pre-temperature voltage signal as the temperature voltage signal when the fourth control signal is enabled.

12. A semiconductor device comprising:

a temperature sensor suitable for receiving a mode set signal operable to adjust a level variation and a voltage variation rate of a temperature voltage signal to generate the temperature voltage signal and for generating a reference voltage signal having a relatively constant voltage level, the temperature voltage signal being generated by adjusting a drivability and a resistance value of the temperature sensor in response to the mode set signal;

a code generator suitable for generating a code signal based on a comparison of the temperature voltage signal and the reference voltage signal;

a register suitable for storing the code signal and suitable for outputting the code signal as an internal code signal; and

an output buffer suitable for buffering the internal code signal and generating the buffered internal code signal as the temperature code signal,

wherein the level variation of the temperature voltage signal is adjusted based on the drivability of the temperature sensor and the voltage variation rate of the temperature voltage signal is adjusted based on the resistance value of the temperature sensor.

13. The semiconductor device of claim 12,

wherein the mode set signal comprises a first mode set signal, a second mode set signal and a third mode set signal;

and

wherein the temperature sensor comprises;

a control signal generator suitable for decoding the first, second and third mode set signals to generate first, second, third and fourth control signals;

a drive signal generator suitable for generating a drive signal having a relatively constant level regardless of temperature variation;

a reference voltage generator suitable for generating the reference voltage signal in response to the drive signal; and

a temperature voltage generator suitable for adjusting the drivability and the resistance value of the temperature generator in response to the drive signal and the first, second, third and fourth control signals to generate the temperature voltage signal.

14. The semiconductor device of claim 13, wherein the temperature voltage generator comprises:

a first pre-temperature voltage generator suitable for adjusting a drivability of the first pre-temperature voltage generator in response to the first and second control signals to generate a first pre-temperature voltage signal, wherein a level of the first pre-temperature voltage signal varies according to temperature and suitable for outputting the first pre-temperature voltage signal as the temperature voltage signal in response to the third control signal; and

a second pre-temperature voltage generator suitable for adjusting a drivability of the second pre-temperature voltage generator in response to the first and second control signals to generate a second pre-temperature voltage signal, wherein a level of the second pre-temperature voltage signal varies according to temperature and suitable for outputting the second pre-temperature voltage signal as the temperature voltage signal in response to the fourth control signal.

15. The semiconductor device of claim 14, wherein the first pre-temperature voltage generator comprise:

a first pull-up driver suitable for pulling up a first node in response to the drive signal, a drivability of the first pull-up driver to pull up the first node being adjusted according to a logic level combination of the first and second control signals; and

a first resistance controller suitable for generating the first pre-temperature voltage signal according to resistance values of first and second temperature elements, wherein the first and second temperature elements are electrically coupled in series between the first node and a ground voltage terminal and suitable for outputting the first pre-temperature voltage signal as the temperature voltage signal when the third control signal is enabled.

16. The semiconductor device of claim 15, wherein the first pull-up driver comprises:

a first driver suitable for pulling up the first node in response to the drive signal;

a second driver suitable for pulling up the first node in response to the drive signal when the first control signal is enabled; and

a third driver suitable for pulling up the first node in response to the drive signal when the second control signal is enabled.

17. The semiconductor device of claim 15,

wherein the first resistance controller comprises the first temperature element, the second temperature element and a first switch element;

wherein the first temperature element is electrically coupled between the first node and a second node, wherein the first pre-temperature voltage signal is output via the second node, and a gate of the first temperature element is electrically coupled to the first node;

wherein the second temperature element is electrically coupled between the second node and the ground voltage terminal, and a gate of the second temperature element is electrically coupled to the first node; and

wherein the first switch element outputs the first pre-temperature voltage signal as the temperature voltage signal when the third control signal is enabled.

18. The semiconductor device of claim 14, wherein the second pre-temperature voltage generator comprises:

a second pull-up driver suitable for pulling up a third node in response to the drive signal, a drivability of the second pull-up driver to pull up the third node being adjusted according to a logic level combination of the first and second control signals; and

a second resistance controller suitable for generating the second pre-temperature voltage signal according to resistance values of third and fourth temperature elements, wherein the third and fourth temperature elements are electrically coupled in series between the third node and a ground voltage terminal and suitable for outputting the second pre-temperature voltage signal as the temperature voltage signal when the fourth control signal is enabled.

19. The semiconductor device of claim 18, wherein the second pull-up driver comprises:

a fourth driver suitable for pulling up the third node in response to the drive signal;

a fifth driver suitable for pulling up the third node in response to the drive signal when the first control signal is enabled; and

a sixth driver suitable for pulling up the third node in response to the drive signal when the second control signal is enabled.

20. The semiconductor device of claim 18,

wherein the second resistance controller comprises the third temperature element, the fourth temperature element and a second switch element;

wherein the third temperature element is electrically coupled between the third node and a fourth node, wherein the second pre-temperature voltage signal is output via the fourth node, and a gate of the third temperature element is electrically coupled to the third node;

wherein the fourth temperature element is electrically coupled between the fourth node and a second node, wherein the first pre-temperature voltage signal is output via the second node, and a gate of the fourth temperature element is electrically coupled to the third node; and

wherein the second switch element outputs the second pre-temperature voltage signal as the temperature voltage signal when the fourth control signal is enabled.