BIAS CIRCUIT FOR A HIGH POWER RADIO FREQUENCY SWITCHING DEVICE

• US 20150256172A1
• Filed: 03/04/2014
• Published: 09/10/2015
• Est. Priority Date: 03/04/2014
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: TriQuint Semiconductor Incorporated (Qorvo, Inc.)
• Inventors: Campbell, Charles F.
• Granted Patent: US 9,768,770 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H03K 17/161 in field-effect transistor switches
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 2217/0054 Gating switches, e.g. pass gates

Abstract

Embodiments provide a switching circuit including a transistor and a bias circuit. The transistor may transition between an off state and an on state responsive to a control signal received at a control terminal. The bias circuit may be coupled between the control terminal and a gate terminal of the transistor. The bias circuit may include a gate resistor coupled between the gate terminal and the control terminal. The bias circuit may further include one or more diodes coupled in parallel with the gate resistor between the gate terminal and the control terminal to allow leakage current to pass from the gate terminal through the one or more diodes. In some embodiments, the bias circuit may include a switch coupled with the one or more diodes to selectively couple the one or more diodes in parallel with the gate resistor when the transistor is off.

Claims

1. A circuit comprising:

a transistor having a gate terminal;

a control terminal coupled with the gate terminal, the control terminal to receive a control voltage to switch the transistor between a first state and a second state to facilitate switching of a radio frequency (RF) signal;

a gate resistor coupled between the gate terminal and the control terminal; and

one or more diodes coupled in parallel with the gate resistor between the gate terminal and the control terminal.

2. The circuit of claim 1, further comprising a switch coupled with the one or more diodes to selectively couple the one or more diodes in parallel with the gate resistor when the transistor is in the first state.

3. The circuit of claim 2, wherein the transistor is a first transistor and the gate terminal is a first gate terminal, and wherein the switch includes a second transistor having a second gate terminal to receive a constant bias voltage.

4. The circuit of claim 3, wherein the constant bias voltage has a value equal to a value of the control voltage when the first transistor is in the first state.

5. The circuit of claim 4, wherein the control voltage is a first control voltage, and wherein the apparatus further includes a gate circuit coupled with the second gate terminal of the second transistor, the gate circuit to generate the constant bias voltage based on the first control voltage, and a second control voltage that is complementary to the first control voltage.

6. The circuit of claim 1, wherein the control voltage has a value of about 0 volts when the transistor is in the second state and a negative voltage when the transistor is in the first state, and wherein the transistor is off during the first state and on during the second state.

7. The circuit of claim 1, wherein the transistor is a gallium nitride (GaN) transistor.

8. The circuit of claim 1, wherein the transistor is a series transistor coupled in series with a transmission path of the RF signal, wherein the gate resistor and one or more diodes are included in a first bias circuit, and wherein the apparatus further includes:

a shunt transistor coupled in shunt with the transmission path, the shunt transistor having a gate terminal; and

a second bias circuit coupled with the gate terminal of the shunt transistor.

9. The circuit of claim 1, wherein the one or more diodes include a plurality of diodes coupled in series with one another between the gate terminal and the control terminal.

10. A radio frequency (RF) switching apparatus comprising:

a transistor having a gate terminal;

a control terminal coupled with the gate terminal, the control terminal to receive a control voltage to turn the transistor on or off to facilitate switching of an RF signal; and

a bias circuit coupled between the gate terminal and the control terminal, the bias circuit including a gate resistor coupled between the gate terminal and the control terminal, and the bias circuit to selectively provide a conductive path between the gate terminal and the control terminal, around the gate resistor and through one or more diodes, when the transistor is off.

11. The apparatus of claim 10, wherein the transistor is a first transistor and the gate terminal is a first gate terminal, and wherein the bias circuit includes a second transistor coupled with the one or more diodes to selectively conductively couple the one or more diodes in parallel with the gate resistor when the transistor is off.

12. The apparatus of claim 11, wherein a second gate terminal of the second transistor is to receive a constant bias voltage having a value equal to a value of the control voltage when the first transistor is off.

13. The apparatus of claim 12, wherein the control voltage is a first control voltage, and wherein the apparatus further includes a gate circuit coupled with the second gate terminal of the second transistor, the gate circuit to generate the constant bias voltage based on the first control voltage and a second control voltage that is complementary to the first control voltage.

14. The apparatus of claim 10, wherein the control voltage has a value of about 0 volts when the transistor is on and a negative voltage when the transistor is off.

15. The apparatus of claim 10, wherein the transistor is a series transistor coupled in series with a transmission path of the RF signal, wherein the gate resistor and the one or more diodes are included in a first bias circuit, and wherein the apparatus further includes:

a shunt transistor coupled in shunt with the transmission path, the shunt transistor having a gate terminal; and

a second gate circuit coupled with the gate terminal of the shunt transistor.

16. The apparatus of claim 10, wherein the one or more diodes include a plurality of diodes coupled in series with one another between the gate terminal and the control terminal.

17. A system comprising:

an input port to receive a radio frequency (RF) signal;

an output port;

a series transistor coupled in series between the input port and the output port to selectively pass the RF signal to the output port when the series transistor is on;

a series control terminal coupled with a gate terminal of the series transistor, the series control terminal to receive a series control voltage to turn the series transistor on or off; and

a series bias circuit coupled with the gate terminal of the series transistor, the series bias circuit including;

a series gate resistor coupled between the gate terminal of the series transistor and the series control terminal;

one or more diodes coupled in parallel with the series gate resistor between the gate terminal of the series transistor and the series control terminal; and

a switch coupled in series with the one or more diodes between the gate terminal of the series transistor and the series control terminal to selectively conductively couple the one or more diodes in parallel with the series gate resistor responsive to the series control voltage.

18. The system of claim 17, further comprising:

a shunt transistor coupled in shunt with a transmission path between the input port and the output port;

a shunt control terminal coupled with a gate terminal of the shunt transistor, the shunt control terminal to receive a shunt control voltage to turn the shunt transistor on or off, the shunt control voltage being complementary to the series control voltage; and

a shunt bias circuit coupled with the gate terminal of the shunt transistor, the shunt bias circuit including;

a shunt gate resistor coupled between the gate terminal of the shunt transistor and the shunt control terminal;

one or more diodes coupled in parallel with the shunt gate resistor between the gate terminal of the shunt transistor and the shunt control terminal; and

a switch coupled in series with the one or more diodes between the gate terminal of the shunt transistor and the shunt control terminal to selectively conductively couple the one or more diodes of the shunt bias circuit with the shunt control terminal responsive to the shunt control voltage.

19. The system of claim 18, wherein the switches of the series bias circuit and the shunt bias circuit include transistors, wherein the system further includes individual gate circuits coupled with a gate terminal of the respective transistors of the switches, the individual gate circuits to:

receive the series control voltage and the shunt control voltage; and

pass a constant bias voltage to the gate terminal of the transistor of the switch, the constant bias voltage having a value equal to the lesser of a value of the series control voltage and a value of the shunt control voltage.

20. The system of claim 17, wherein the one or more diodes include a plurality of diodes coupled in series with one another between the gate terminal of the series transistor and the series control terminal.

21. The system of claim 17, wherein the series transistor is a gallium nitride (GaN) transistor.

22. A user equipment including the system of claim 17 to switch the RF signal for transmission over a wireless communication network.