Pressure Difference Sensor and Method for its Manufacture
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Abstract
A pressure difference sensor includes a measuring membrane, which is arranged between two platforms and connected pressure-tightly with the platforms, in each case, via a first insulating layer for forming pressure chambers between the platforms and the measuring membrane. The insulating layer is especially silicon oxide, wherein the pressure difference sensor further includes an electrical transducer for registering a pressure dependent deflection of the measuring membrane. The platforms have support positions, against which the measuring membrane lies at least partially in the case of overload, wherein the support positions have position dependent heights, characterized in that the support positions are formed in the first insulating layer by isotropic etching, and the particular height h of a support position, in each case, is a function of a distance from a base of the support position in the reference plane.
12 Citations
31 Claims
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1-18. -18. (canceled)
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19. A pressure difference sensor, comprising:
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a measuring membrane; a first platform; a second platform; and an electrical transducer for registering a pressure dependent deflection of the measuring membrane, wherein; said measuring membrane is arranged between said first and said second platforms; said measuring membrane is connected pressure-tightly with said first platform and said second platform, in each case, via a first insulating layer for forming a first, respectively second, pressure chamber between said platforms and said measuring membrane; said insulating layer comprises especially silicon oxide; wherein said first platform and/or said second platform have/has support positions, against which said measuring membrane lies at least partially in the case of unilateral overload; said support positions have position dependent heights with respect to a reference plane, which extends parallel to a plane, which is defined by said measuring membrane; said support positions are formed in said first insulating layer by isotropic etching, and the particular height of a support position, in each case, is a function of a distance from a base of said support position in the reference plane. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification