SEMICONDUCTOR DEVICE

• US 20150262922A1
• Filed: 01/09/2015
• Published: 09/17/2015
• Est. Priority Date: 03/13/2014
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: TAKAHASHI, Noriyuki
• Granted Patent: US 10,032,700 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/4842 Mechanical treatment, e.g. punching, cutting, deforming, cold welding
• CPC Class Codes: H01L 2223/54406 comprising alphanumeric information
• CPC Class Codes: H01L 2223/54433 containing identification or tracking information
• CPC Class Codes: H01L 2223/54486 Located on package parts, e.g. encapsulation, leads, package substrate
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49503 characterised by the die pad
• CPC Class Codes: H01L 23/4952 the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49541 : Geometry of the lead-frame
• CPC Class Codes: H01L 23/49555 : the bent parts being the outer leads
• CPC Class Codes: H01L 23/49565 : Side rails of the lead frame, e.g. with perforations, sprocket holes
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 23/544 : Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10162 : with a square active surface
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

A QFP has a die pad on which a semiconductor chip is mounted, a plurality of inner parts disposed around the die pad, a plurality of outer parts respectively connected with the plurality of inner parts, a plurality of wires electrically connect the bonding pads of the semiconductor chip and the plurality of inner parts, and a sealing body that seals the semiconductor chip. Moreover, the thickness of the semiconductor chip is larger than a thickness from a lower surface of the die pad to a lower surface of the sealing body, and a distance from the lower surface of the sealing body to a tip portion of each of the plurality of outer parts is larger than a thickness of the sealing body from a main surface of the semiconductor chip to an upper surface of the sealing body.

Claims

1. A semiconductor device comprising:

a die pad including a first surface and a second surface opposite to the first surface;

a semiconductor chip including a main surface, a plurality of bonding electrodes formed on the main surface and a back surface opposite to the main surface, and mounted on the first surface of the die pad via a die bond material such that the back surface faces the first surface of the die pad;

a plurality of leads electrically connected with the plurality of bonding electrodes via a plurality of wires, respectively; and

a sealing body including an upper surface positioned on the main surface side of the semiconductor chip, a lower surface opposite to the upper surface and a side surface located between the upper surface and the lower surface, and sealing the die pad, the semiconductor chip and the plurality of wires such that a part of each of the plurality of leads protrudes from the side surface,

wherein the part of each of the plurality of leads is bent on an outside of the sealing body,

a thickness of the semiconductor chip is larger than a thickness from the second surface of the die pad to the lower surface of the sealing body, and

a distance from the lower surface of the sealing body to a tip portion of the part of each of the plurality of leads is larger than a thickness of the sealing body from the main surface of the semiconductor chip to the upper surface of the sealing body.

2. The semiconductor device according to claim 1,

wherein the sealing body is made of thermosetting epoxy-based resin,

the semiconductor chip includes a base material, made of silicon and a multilayer wiring layer that is formed on an element formation surface of the base material and thinner than the thickness of the base material, and

a linear expansion coefficient of the semiconductor chip is smaller than a linear expansion coefficient of the sealing body.

3. The semiconductor device according to claim 1,

wherein each of the plurality of leads includes a wire joint portion to which the wire is bonded, a first bending portion that is bent toward a thickness direction of the sealing body and a second bending portion that is bent toward a direction in parallel with the upper surface of the sealing body, and

a distance from the lower surface of the sealing body to the second bending portion of each of the plurality of leads is larger than a thickness from an upper surface of the wire joint portion of each of the plurality of leads to the upper surface of the sealing body or a thickness from a lower surface of the wire joint portion of each of the plurality of leads to the lower surface of the sealing body.

4. The semiconductor device according to claim 1,

wherein each of the plurality of leads includes a wire joint portion to which the wire is bonded, a first bending portion that is bent toward a thickness direction of the sealing body and a second bending portion that is bent toward a direction in parallel with the upper surface of the sealing body,

the wire joint portion is sealed with the sealing body,

each of the first bending portion and the second bending portion is exposed from the sealing body,

the first bending portion is disposed so as to be spaced apart from the semiconductor chip compared with the wire joint portion, and

the second bending portion is disposed so as to be spaced apart from the semiconductor chip compared with the first bending portion.

5. The semiconductor device according to claim 1,

wherein the thickness of the semiconductor chip is larger than a thickness of the sealing body from the main surface of the semiconductor chip to the upper surface of the sealing body.

6. The semiconductor device according to claim 1,

wherein a distance from the lower surface of the sealing body to the tip portion of the part of each of the plurality of leads is larger than the thickness of the semiconductor chip.