FinFET Devices with Unique Fin Shape and the Fabrication Thereof
First Claim
1. A semiconductor device, comprising:
- a substrate;
a dielectric layer disposed over the substrate; and
a fin structure disposed over the dielectric layer;
wherein;
the fin structure contains a semiconductor material; and
the dielectric layer disposed below the fin structure includes a lateral recess.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device includes a PMOS FinFET and an NMOS FinFET. The PMOS FinFET includes a substrate, a silicon germanium layer disposed over the substrate, a silicon layer disposed over the silicon germanium layer, and a PMOS fin disposed over the silicon layer. The PMOS fin contains silicon germanium. The NMOS FinFET includes the substrate, a silicon germanium oxide layer disposed over the substrate, a silicon oxide layer disposed over the silicon germanium oxide layer, and an NMOS fin disposed over the silicon oxide layer. The NMOS fin contains silicon. The silicon germanium oxide layer and the silicon oxide layer collectively define a concave recess in a horizontal direction. The concave recess is partially disposed below the NMOS fin.
-
Citations
20 Claims
-
1. A semiconductor device, comprising:
-
a substrate; a dielectric layer disposed over the substrate; and a fin structure disposed over the dielectric layer; wherein; the fin structure contains a semiconductor material; and the dielectric layer disposed below the fin structure includes a lateral recess. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A semiconductor device, comprising:
-
a p-channel metal-oxide-semiconductor (PMOS) FinFET that includes; a substrate; a silicon germanium layer disposed over the substrate; a silicon layer disposed over the silicon germanium layer; and a PMOS fin disposed over the silicon layer, wherein the PMOS fin contains silicon germanium; and an n-channel metal-oxide-semiconductor (NMOS) FinFET that includes; the substrate; a silicon germanium oxide layer disposed over the substrate; a silicon oxide layer disposed over the silicon germanium oxide layer; and an NMOS fin disposed over the silicon oxide layer, wherein the NMOS fin contains silicon, and wherein the silicon germanium oxide layer and the silicon oxide layer collectively define a concave recess in a horizontal direction, the concave recess being partially disposed below the NMOS fin. - View Dependent Claims (9, 10, 11)
-
-
12. A method of fabricating a semiconductor device having a p-channel metal-oxide-semiconductor (PMOS) region and an n-channel metal-oxide-semiconductor (NMOS) region, the method comprising:
-
forming a first semiconductor layer over the substrate, the first semiconductor layer spanning across both the PMOS region and the NMOS region; forming a second semiconductor layer over the first semiconductor layer; forming a plurality of recesses that each extend through the first semiconductor layer and the second semiconductor layer, the recesses being formed in both the PMOS region and the NMOS region; forming a first protective layer to cover the recesses in the PMOS region but not the recesses in the PMOS region; transforming a portion of the second semiconductor layer in the NMOS region into an insulating layer; thereafter removing the first protective layer; and thereafter forming shallow trench isolations (STIs) in the recesses in both the PMOS region and the NMOS region. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
-
Specification