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FinFET Devices with Unique Fin Shape and the Fabrication Thereof

  • US 20150263003A1
  • Filed: 03/13/2014
  • Published: 09/17/2015
  • Est. Priority Date: 03/13/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a dielectric layer disposed over the substrate; and

    a fin structure disposed over the dielectric layer;

    wherein;

    the fin structure contains a semiconductor material; and

    the dielectric layer disposed below the fin structure includes a lateral recess.

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