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FINFET Structure and Method for Fabricating the Same

  • US 20150263159A1
  • Filed: 03/17/2014
  • Published: 09/17/2015
  • Est. Priority Date: 03/17/2014
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a substrate formed of a first semiconductor material;

    a fin structure protruding over the substrate, wherein the fin structure comprises;

    a lower portion formed of the first semiconductor material;

    a middle portion formed of a second semiconductor material;

    an upper portion formed of the first semiconductor material, wherein the upper portion comprises a channel connected between a first source/drain region and a second source/drain region; and

    a first carbon doped layer formed between the middle portion and the upper portion;

    a second carbon doped layer formed underlying the first source/drain region; and

    a third carbon doped layer formed underlying the second source/drain region.

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