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PRECISION HALF CELL FOR SUB-FEMTO UNIT CAP AND CAPACITIVE DAC ARCHITECTURE IN SAR ADC

  • US 20150263754A1
  • Filed: 03/10/2015
  • Published: 09/17/2015
  • Est. Priority Date: 03/16/2014
  • Status: Active Grant
First Claim
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1. A capacitive device, comprising:

  • a first conductor formed on a lower metal wiring layer of a plurality of metal wiring layers, wherein the first conductor is coupled to a first terminal;

    a second conductor formed on an upper metal wiring layer of the plurality of metal wiring layers; and

    a plurality of parallel wires partitioned into a plurality of groups, wherein parallel wires included in each group of the plurality of groups are formed on a respective one of a subset of the plurality of metal wiring layers, wherein the subset of the plurality of metal wiring layers is between the upper metal wiring layer and the lower metal wiring layer,wherein;

    a first parallel wire and a second parallel wire of each group of the plurality of groups is coupled to a second terminal;

    a third parallel wire of each group of the plurality of groups is coupled to the first conductor, wherein the third parallel wire is adjacent to the first parallel wire;

    a fourth parallel wire of each group of the plurality of groups is coupled to the second conductor, wherein the fourth parallel wire is adjacent to the second parallel wire;

    a fifth parallel wire of each group of a first subset of the plurality groups is coupled to the second conductor, and wherein the fifth parallel wire of each group of a second subset of the plurality of groups is coupled to the first conductor; and

    the fifth parallel wire of each group of the plurality of groups is adjacent to the first parallel wire and the second parallel wire.

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