SEALING MATERIAL, SUBSTRATE WITH SEALING MATERIAL LAYER, STACK, AND ELECTRONIC DEVICE

• US 20150266772A1
• Filed: 06/03/2015
• Published: 09/24/2015
• Est. Priority Date: 12/10/2012
• Status: Abandoned Application

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: MITSUI, Yoko, TAKEDA, Satoshi, NAGAO, Yohei
• Application Number:
  US14/729,302
• Publication Number:
  US 20150266772A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B32B 15/04 comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to a bituminous or tarry layer B32B11/08; next to a water-setting substance layer B32B13/06; next to a glass layer B32B17/061; next to a cellulosic plastic layer B32B23/042
• CPC Class Codes: B32B 17/06 comprising glass as the main or only constituent of a layer, next to another layer of a specific material
• CPC Class Codes: B32B 2457/00 Electrical equipment
• CPC Class Codes: B32B 2457/14 Semiconductor wafers
• CPC Class Codes: B32B 7/14 applied in spaced arrangements, e.g. in stripes
• CPC Class Codes: C03C 17/04 by fritting glass powder
• CPC Class Codes: C03C 2204/00 Glasses, glazes or enamels with special properties
• CPC Class Codes: C03C 23/0025 by a laser beam
• CPC Class Codes: C03C 27/10 with the aid of adhesive specially adapted for that purpose
• CPC Class Codes: C03C 3/145 containing aluminium or beryllium
• CPC Class Codes: C03C 8/04 containing zinc
• CPC Class Codes: C03C 8/14 Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
• CPC Class Codes: C03C 8/16 with vehicle or suspending agents, e.g. slip
• CPC Class Codes: C03C 8/24 Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
• CPC Class Codes: C04B 2235/5212 Organic
• CPC Class Codes: C04B 2237/06 Oxidic interlayers
• CPC Class Codes: C04B 2237/10 Glass interlayers, e.g. frit or flux
• CPC Class Codes: C04B 2237/592 whereby the interlayer is not continuous, e.g. not the whole surface of the smallest substrate is covered by the interlayer
• CPC Class Codes: C04B 37/045 characterised by the interlayer used C04B37/047 takes precedence
• CPC Class Codes: H01L 23/06 characterised by the material of the container or its electrical properties
• CPC Class Codes: H01L 23/10 : characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/239 : Complete cover or casing

Abstract

A sealing material containing 30 to 99 mass % of a glass powder and 1 to 70 mass % of a conductive metal oxide powder.

Claims

1. A sealing material comprising:

30 to 99 mass % of a glass powder; and

1 to 70 mass % of a conductive metal oxide powder.

3. The sealing material according to claim 1, further comprising:

a ceramics powder,

wherein a total content of the glass powder and the ceramics powder is more than 30 mass % and 99 mass % or less, and a content of the conductive metal oxide powder is 1 mass % or more and less than 70 mass %.

5. The sealing material according to claim 1,

wherein the conductive metal oxide powder contains at least one selected from the group consisting of ITO powder, powder of tin-based oxide containing a dopant, and powder of ZnO containing a dopant.

6. The sealing material according to claim 1,

wherein the conductive metal oxide powder is powder of tin-based oxide containing a dopant.

7. The sealing material according to claim 5,

wherein the powder of tin-based oxide containing the dopant contains FTO powder and/or ATO powder.

8. The sealing material according to claim 5,

wherein D₅₀ of the powder of tin-based oxide containing the dopant is 0.1 μ

M to 5 μ

M.

9. The sealing material according to claim 5,

wherein a content of the powder of tin-based oxide containing the dopant is 5 to 30 vol %.

10. The sealing material according to claim 1,

wherein the sealing material is for laser sealing.

11. The sealing material according to claim 1,

wherein the glass powder is bismuth-based glass powder or tin phosphate-based glass powder.

12. The sealing material according to claim 3,

wherein the ceramics powder is one or more selected from the group consisting of magnesia, calcia, silica, alumina, zirconia, zircon, cordierite, zirconium phosphate tungstate, zirconium tungstate, zirconium phosphate, zirconium silicate, aluminum titanate, mullite, eucryptite, and spodumene.

13. A substrate with a sealing material layer, comprising:

an inorganic material substrate; and

a sealing material layer made by firing the sealing material according to claim 1, in a predetermined region on a surface of the inorganic material substrate.

14. The substrate with the sealing material layer according to claim 13,

wherein the inorganic material substrate is one selected from the group consisting of a glass substrate, a ceramics substrate, a metal substrate, and a semiconductor substrate.

15. The substrate with the sealing material layer according to claim 13,

wherein the inorganic material substrate is a soda lime glass substrate or a non-alkali glass substrate.

16. A stack comprising:

a first substrate having a first sealing region on a sealing side surface;

a second substrate having a second sealing region corresponding to the first sealing region on a surface facing the first substrate, the second substrate disposed over a predetermined space from the first substrate; and

a sealing layer disposed between the first sealing region and the second sealing region and made by melting and solidifying the sealing material according to claim 1.

17. An electronic device comprising:

a first substrate having a first sealing region on a sealing side surface;

a second substrate having a second sealing region corresponding to the first sealing region on a surface facing the first substrate, the second substrate disposed over a predetermined space from the first substrate;

an electronic element disposed between the first substrate and the second substrate; and

a sealing layer disposed between the first sealing region and the second sealing region in a manner to seal the electronic element and made by melting and solidifying the sealing material according to claim 1.

2. A sealing material comprising:

40 to 99 vol % of a glass powder; and

1 to 60 vol % of a conductive metal oxide powder.

4. The sealing material according to claim 2, further comprising:

a ceramics powder,

wherein a total content of the glass powder and the ceramics powder is more than 40 vol % and 99 vol % or less, and a content of the conductive metal oxide powder is 1 vol % or more and less than 60 vol %.

18. A substrate with a sealing material layer, comprising:

an inorganic material substrate; and

a sealing material layer made by firing the sealing material according to claim 2, in a predetermined region on a surface of the inorganic material substrate.

19. A stack comprising:

a first substrate having a first sealing region on a sealing side surface;

a second substrate having a second sealing region corresponding to the first sealing region on a surface facing the first substrate, the second substrate disposed over a predetermined space from the first substrate; and

a sealing layer disposed between the first sealing region and the second sealing region and made by melting and solidifying the sealing material according to claim 2.

20. An electronic device comprising:

a first substrate having a first sealing region on a sealing side surface;

a second substrate having a second sealing region corresponding to the first sealing region on a surface facing the first substrate, the second substrate disposed over a predetermined space from the first substrate;

an electronic element disposed between the first substrate and the second substrate; and

a sealing layer disposed between the first sealing region and the second sealing region in a manner to seal the electronic element and made by melting and solidifying the sealing material according to claim 2.