Radiation-emitting Component

• US 20150268543A1
• Filed: 10/11/2013
• Published: 09/24/2015
• Est. Priority Date: 10/15/2012
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wagner, Konrad, Wiener, Daniel
• Granted Patent: US 9,500,938 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: F21K 9/64 using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
• CPC Class Codes: F21V 9/08 for producing coloured light, e.g. monochromatic; for reducing intensity of light with provision for controlling the colour F21V9/40
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: G02B 19/0028 refractive and reflective surfaces, e.g. non-imaging catadioptric systems
• CPC Class Codes: G02B 19/0061 the light source comprising a LED semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission H01L33/00
• CPC Class Codes: G03B 21/204 using secondary light emission, e.g. luminescence or fluorescence using different colours G03B33/00; if related to video signals H04N9/3197
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

A radiation-emitting component is disclosed. In embodiments a component includes a radiation-emitting semiconductor chip having a radiation exit area including a side face and a main face, a conversion element having a radiation exit area including a side face and a main face, and a first reflection element disposed downstream of the conversion element and the radiation-emitting semiconductor chip, wherein a ratio of a sum of the radiation exit areas of the radiation-emitting semiconductor chip to a sum of the radiation exit areas of the conversion element is greater than 1, wherein the conversion element adjoins the radiation-emitting semiconductor chip, wherein the radiation-emitting semiconductor chip is configured to generate primary radiation, wherein the conversion element is configured to convert the primary radiation into secondary radiation, and wherein the primary radiation and the secondary radiation leave the radiation-emitting component exclusively through the first reflection element.

Claims

1-11. -11. (canceled)

12. A radiation-emitting component comprising:

at least one radiation-emitting semiconductor chip, wherein each of the radiation-emitting semiconductor chips has a radiation exit area comprising at least one side face and a main face of the radiation-emitting semiconductor chip;

at least one conversion element, wherein each of the conversion elements has a radiation exit area comprising at least one side face and a main face of the conversion element; and

a first reflection element disposed downstream of the at least one conversion element and the at least one radiation-emitting semiconductor chip,

wherein a ratio of a sum of the radiation exit areas of all the radiation-emitting semiconductor chips to a sum of the radiation exit areas of all the conversion elements is greater than 1,

wherein the at least one conversion element adjoins the at least one radiation-emitting semiconductor chip at least in places,

wherein the at least one radiation-emitting semiconductor chip is configured to generate primary radiation,

wherein the conversion element is configured to convert the primary radiation into secondary radiation,

wherein the primary radiation and the secondary radiation leave the radiation-emitting component exclusively through the first reflection element, and

wherein the first reflection element reflects at least 50% of the primary radiation.

13. The radiation-emitting component according to claim 12, wherein part of the primary radiation from at least one of the radiation-emitting semiconductor chips irradiates directly on the first reflection element and part directly enters the at least one adjoining conversion element.

14. The radiation-emitting component according to claim 12, wherein the primary radiation reflected at the first reflection element at least partly irradiates on the conversion element.

15. The radiation-emitting component according to claim 12, wherein a number of radiation-emitting semiconductor chips is greater than a number of conversion elements.

16. The radiation-emitting component according to claim 12, wherein the radiation-emitting component comprises at least two radiation-emitting semiconductor chips and a single conversion element.

17. The radiation-emitting component according to claim 12, further comprising a carrier having a first main face, wherein the first main face comprises a second reflection element, wherein the at least one radiation-emitting semiconductor chip is arranged on the first main face of the carrier, and wherein the second reflection element is configured to reflect the primary radiation and the secondary radiation.

18. The radiation-emitting component according to claim 17, wherein the carrier comprises sidewall faces which adjoin the first main face of the carrier at least in places, wherein the second reflection element is embodied on the sidewall faces of the carrier, and wherein the sidewall faces encloses the at least one radiation-emitting semiconductor chip in a lateral direction.

19. The radiation-emitting component according to claim 12, wherein the primary radiation is in a spectral range of blue light.

20. The radiation-emitting component according to claim 12, wherein the secondary radiation is in a spectral range of visible light and has a different color than the primary radiation.

21. The radiation-emitting component according to claim 12, wherein the at least one conversion element is arranged at a main face of the at least one radiation-emitting semiconductor chip and adjoins the main face of the at least one radiation-emitting semiconductor chip, and wherein at least the side faces of the at least one radiation-emitting semiconductor chip are free of the at least one conversion element.

22. An optical projection device comprising:

a light source, which comprises at least one radiation-emitting component according to claim 12; and

an imaging element, where the light source is provided for illuminating the imaging element.