OXIDE SEMICONDUCTOR DEPOSITING APPARATUS AND METHOD OF MANUFACTURING OXIDE SEMICONDUCTOR USING THE SAME

• US 20150270118A1
• Filed: 10/14/2014
• Published: 09/24/2015
• Est. Priority Date: 03/21/2014
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: KISHIMOTO, Katsushi, MOON, Yeon-Keon, FUKASAWA, Takayuki, SHIN, Sang-Won, SOHN, Sang-Woo
• Granted Patent: US 9,644,270 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/67745 characterized by movements or sequence of movements of transfer devices
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

Claims

1. An oxide semiconductor depositing apparatus comprising:

a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and comprises;

a chamber body;

a heater disposed in the chamber body, which is configured to heat the first substrate; and

a cathode plate spaced apart from the heater and to which a high frequency voltage is applied; and

a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

2. The oxide semiconductor depositing apparatus of claim 1, further comprising a gas inlet through which a gas is provided into the chamber body, and

wherein

the cathode plate comprises an upper plate, and a lower plate which faces the upper plate,

the upper plate is connected to the gas inlet, and

a plurality of spraying holes is defined through the lower plate.

3. The oxide semiconductor depositing apparatus of claim 2, wherein the upper plate of the cathode plate of the heating chamber further comprises:

a diffusion portion spaced apart from the lower plate;

a side wall which surrounds the diffusion portion and contacts the lower plate; and

a main path defined in the diffusion portion and connected to the gas inlet.

4. The oxide semiconductor depositing apparatus of claim 3, wherein the upper plate of the cathode plate of the heating chamber further comprises:

a first branch path defined in the diffusion portion and connected to the main path; and

a second branch path connected to the first branch path.

5. The oxide semiconductor depositing apparatus of claim 4, wherein the gas inlet is connected to the main path through the side wall of the upper plate of the cathode plate.

6. The oxide semiconductor depositing apparatus of claim 2, wherein the upper plate and the lower plate of the cathode plate comprises one or more of aluminum, titanium and an alloy thereof.

7. The oxide semiconductor depositing apparatus of claim 1, wherein

the heating chamber is smaller than the cathode plate in a plan view, and

the heating chamber is larger than the first substrate in the plan view.

8. The oxide semiconductor depositing apparatus of claim 1, wherein a size of the cathode plate is more than about 100% of that of the heater and less than about 110% of that of the heater, in a plan view.

9. The oxide semiconductor depositing apparatus of claim 1, further comprising:

a gas spraying part configured to provide a gas in to the chamber body of the heating chamber; and

a cooler which is configured to cool the first substrate.

10. The oxide semiconductor depositing apparatus of claim 1, wherein the heater comprises a central portion, and a peripheral portion which surrounds the central portion, and the central portion and the peripheral portion are individually controllable.

11. A method of manufacturing an oxide semiconductor comprising:

forming an insulation layer on a substrate;

plasma treating a surface of the insulation layer, the plasma treating comprises;

heating the insulation layer; and

generating a plasma on the insulation layer after heating the insulation layer; and

forming an active pattern comprising an oxide semiconductor on the insulation layer which is plasma treated.

12. The method of claim 11, wherein the plasma treating further comprises re-heating the insulation layer after the generating the plasma

13. The method of claim 12, wherein the heating the insulation layer of the plasma treating comprises:

first heating an entire portion of the substrate; and

second heating a central portion of the substrate except for a boundary of the substrate.

14. The method of claim 13, wherein gas for the plasma treating is provided on the substrate in the second heating and in the generating the plasma

15. The method of claim 12, wherein the plasma treating further comprises cooling the substrate after the re-heating the substrate.

16. The method of claim 11, wherein the forming the active pattern comprises:

forming a bottom layer on the insulation layer;

forming a bulk layer on the bottom layer; and

forming a surface layer on the bulk layer.

17. The method of claim 11, wherein in the plasma treating,

the substrate is plasma treated using an oxide semiconductor deposition apparatus including a chamber body, a heater disposed in the chamber body and configured to heat the substrate, and a cathode plate to which a high frequency voltage is applied.

18. The method of claim 17, wherein the cathode plate of the oxide semiconductor depositing apparatus comprises one or more of aluminum, titanium and an alloy thereof.