×

OXIDE SEMICONDUCTOR DEPOSITING APPARATUS AND METHOD OF MANUFACTURING OXIDE SEMICONDUCTOR USING THE SAME

  • US 20150270118A1
  • Filed: 10/14/2014
  • Published: 09/24/2015
  • Est. Priority Date: 03/21/2014
  • Status: Active Grant
First Claim
Patent Images

1. An oxide semiconductor depositing apparatus comprising:

  • a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and comprises;

    a chamber body;

    a heater disposed in the chamber body, which is configured to heat the first substrate; and

    a cathode plate spaced apart from the heater and to which a high frequency voltage is applied; and

    a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×