COMPOSITE DIELECTRIC MATERIALS WITH IMPROVED MECHANICAL AND ELECTRICAL PROPERTIES

• US 20150270124A1
• Filed: 03/20/2014
• Published: 09/24/2015
• Est. Priority Date: 03/20/2014
• Status: Active Grant

• Current Assignee: Elpis Technologies Inc. (Wi-LAN Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Canaperi, Donald F., Grill, Alfred, Nguyen, Son V., Priyadarshini, Deepika, Shobha, Hosadurga
• Granted Patent: US 9,214,332 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 2221/1047 the air gaps being formed by pores in the dielectric
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A low k dielectric material with enhanced electrical and mechanical properties is provided which, in some applications, can also reduce the capacitance of a semiconductor device. The low k dielectric material includes CNT nanotubes that are randomly dispersed within a low k dielectric material matrix. The low k dielectric material can be used in a variety of electronic devices including, for example, as an insulator layer within a back end of line interconnect structure.

Claims

1. A method for forming a dielectric material comprising:

providing, in any order, a solution containing a low dielectric constant material and another solution containing carbon nanotubes (“

CNTs”

); and

depositing the solutions on a surface of a substrate to provide a composite dielectric material, said composite dielectric material having a dielectric constant of 3.5 or less and comprising a first dielectric material, and a second dielectric material comprising said carbon nanotubes (CNTs), wherein said second dielectric material is randomly dispersed in said first dielectric material.

2. The method of claim 1, wherein said solution containing the low dielectric constant material and said another solution containing said CNTs are pre-mixed together prior to introduction into a reactor.

3. The method of claim 1, wherein said solution containing the low dielectric constant material and said another solution containing said CNTs are individually and sequentially deposited on said surface of said substrate.

4. The method of claim 3, wherein said solution containing said low dielectric constant material is deposited prior to depositing said another solution containing said CNTs.

5. The method of claim 1, further comprising curing said composite dielectric material.

6. The method of claim 1, wherein said low dielectric constant material comprises atoms of silicon, carbon, oxygen and hydrogen.

7. The method of claim 1, wherein said CNTs in said another solution have a diameter from 1 nm to 20 nm.

8. The method of claim 1, wherein said CNTs in said another solution have a length from 0.5 nm to 500 μ

m.

9. The method of claim 1, wherein said CNTs in said another solution are non-metallic or oxidized CNTs.

10. A composite dielectric material comprising:

a first dielectric material; and

a second dielectric material comprising carbon nanotubes (CNTs),

wherein said second dielectric material is randomly dispersed in said first dielectric material and said composite dielectric material having a dielectric constant of 3.5 or less.

11. The composite dielectric material of claim 10, wherein said first dielectric material comprises atoms of silicon, carbon, oxygen, and hydrogen.

12. The composite dielectric material of claim 10, wherein said second dielectric material is encased in a polymer.

13. The composite dielectric material of claim 10, wherein each CNT has a diameter from 1 nm to 20 nm.

14. The composite dielectric material of claim 10, wherein said CNTs are encapsulated in a localized matrix.

15. The composite dielectric material of claim 14, wherein said localized matrix is a silicon based matrix.

16. The composite dielectric material of claim 15, wherein said localized matrix is a SiCOH based matrix.

17. A semiconductor structure comprising:

a substrate having an upper surface; and

a composite dielectric material located on said upper surface of said substrate, said composite dielectric material having a dielectric constant of 3.5 or less and comprising a first dielectric material, and a second dielectric material comprising carbon nanotubes (CNTs), wherein said second dielectric material is randomly dispersed in said first dielectric material.

18. The semiconductor structure of claim 17, wherein said first dielectric material comprises atoms of silicon, carbon, oxygen, and hydrogen.

19. The semiconductor structure of claim 17, wherein said second dielectric material is encased in a polymer.

20. The composite dielectric material of claim 17, wherein each CNT has a diameter from 1 nm to 20 nm.