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SHALLOW TRENCH ISOLATION FOR END FIN VARIATION CONTROL

  • US 20150270264A1
  • Filed: 06/08/2015
  • Published: 09/24/2015
  • Est. Priority Date: 03/24/2014
  • Status: Active Grant
First Claim
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1. A fin field effect transistor (FinFET) device, comprising:

  • a plurality of fins;

    a plurality of shallow trench isolation (STI) regions, each adjacent pair of the plurality of fins being separated by one of the plurality of STI regions;

    a deep STI region formed on a first side of an end fin among the plurality of fins; and

    gate material deposited over the plurality of fins and in the deep STI region, the gate material covering both sides of a fin reveal of each of the plurality of fins and covering the first side of the end fin by filling a gap between the first side of the end fin and a gate oxide layer in the deep STI region.

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