VERTICAL NITRIDE SEMICONDUCTOR DEVICE
First Claim
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1. A vertical semiconductor device, comprising:
- a substrate comprising a first material;
a first electrode below the substrate;
at least one semiconductor region comprising a second material different from the first material, the second material being a III-nitride semiconductor material, the at least one semiconductor region being formed over the substrate; and
a second electrode over the at least one semiconductor region.
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Abstract
A vertical semiconductor device and a method of forming the same. A vertical semiconductor device has a substrate that includes a first material, a first electrode below the substrate, and at least one semiconductor region. The at least one semiconductor region includes a second material different from the first material. The second material is a III-nitride semiconductor material. The at least one semiconductor region is formed over the substrate. The vertical semiconductor device also has a second electrode over the at least one semiconductor region.
35 Citations
32 Claims
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1. A vertical semiconductor device, comprising:
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a substrate comprising a first material; a first electrode below the substrate; at least one semiconductor region comprising a second material different from the first material, the second material being a III-nitride semiconductor material, the at least one semiconductor region being formed over the substrate; and a second electrode over the at least one semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of forming a vertical semiconductor device, the method comprising:
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forming, over a substrate comprising a first material, at least one semiconductor region comprising a second material different from the first material, the second material being a III-nitride semiconductor material; and forming a first electrode on a first side of the substrate and a second electrode over the at least one semiconductor region on a second side of the substrate. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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Specification