SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device, comprising:
- a first semiconductor layer of a second conductivity type disposed on one main surface of a semiconductor substrate of a first conductivity type;
a plurality of trench gates penetrating said first semiconductor layer in a thickness direction to reach the inside of said semiconductor substrate;
a second semiconductor layer of the second conductivity type selectively provided in an upper portion of said first semiconductor layer between said trench gates;
an isolation layer that is in contact with a side surface of said second semiconductor layer and extends in said first semiconductor layer in the thickness direction;
a third semiconductor layer of the first conductivity type that is provided in the upper portion of said first semiconductor layer between said trench gates and has at least one side surface in contact with said trench gate;
a first main electrode disposed on said first semiconductor layer so as to come into contact with said second semiconductor layer and said third semiconductor layer; and
a second main electrode provided on the other main surface side opposite to said one main surface of said semiconductor substrate,wherein said isolation layer is provided between said second semiconductor layer and said third semiconductor layer to separate said second and third semiconductor layers from each other and is formed to extend to the same depth as that of said second semiconductor layer or to a position deeper than that of said second semiconductor layer.
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Accused Products
Abstract
A semiconductor device includes a first semiconductor layer on one main surface of a semiconductor substrate; a plurality of trench gates in the first semiconductor layer extending to reach the inside of the semiconductor substrate; a second semiconductor layer selectively provided in an upper portion of the first semiconductor layer between the trench gates; an isolation layer in contact with a side surface of the second semiconductor layer and extends in the first semiconductor; and a third semiconductor layer in the upper portion of the first semiconductor layer between the trench gates and has at least one side surface in contact with the trench gate. The isolation layer is between and separates the second semiconductor layer and the third semiconductor layer from each other and is formed to extend to the same depth as, or to a position deeper than the second semiconductor layer.
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Citations
13 Claims
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1. A semiconductor device, comprising:
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a first semiconductor layer of a second conductivity type disposed on one main surface of a semiconductor substrate of a first conductivity type; a plurality of trench gates penetrating said first semiconductor layer in a thickness direction to reach the inside of said semiconductor substrate; a second semiconductor layer of the second conductivity type selectively provided in an upper portion of said first semiconductor layer between said trench gates; an isolation layer that is in contact with a side surface of said second semiconductor layer and extends in said first semiconductor layer in the thickness direction; a third semiconductor layer of the first conductivity type that is provided in the upper portion of said first semiconductor layer between said trench gates and has at least one side surface in contact with said trench gate; a first main electrode disposed on said first semiconductor layer so as to come into contact with said second semiconductor layer and said third semiconductor layer; and a second main electrode provided on the other main surface side opposite to said one main surface of said semiconductor substrate, wherein said isolation layer is provided between said second semiconductor layer and said third semiconductor layer to separate said second and third semiconductor layers from each other and is formed to extend to the same depth as that of said second semiconductor layer or to a position deeper than that of said second semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification