SUBSTRATE HAVING CONCAVE-CONVEX PATTERN, LIGHT-EMITTING DIODE INCLUDING THE SUBSTRATE, AND METHOD FOR FABRICATING THE DIODE

• US 20150270441A1
• Filed: 06/05/2015
• Published: 09/24/2015
• Est. Priority Date: 09/30/2011
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Jae Kwon, Lee, Sum Geun, Kim, Kyung Wan, Yoon, Yeo Jin, Suh, Duk Il, Kim, Ji Hye
• Granted Patent: US 10,069,038 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconduct or layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.

Claims

1-25. -25. (canceled)

26. A light emitting diode (LED), comprising:

a substrate including a first region and a second region, each of the first region and the second region having concave-convex patterns disposed over an upper surface of the substrate and including convex portions and concave portions defined by the convex portions; and

a stacked structure disposed over the first region, the stacked structure comprising a first conductive semiconductor layer, an active layer disposed over the first conductive semiconductor layer, and a second conductive semiconductor layer disposed over the active layer,

wherein the convex portions of the first region and the convex portions of the second region have different roughness.

27. The LED of claim 26, wherein the convex portions of the first region have a roughness less than the convex portions of the second region.

28. The LED of claim 26, further comprising an insulation layer formed over the concave-convex patterns of the second region.

29. The LED of claim 28, wherein the insulation layer has a shape corresponding to a contour of the convex portions of the second region.

30. The LED of claim 28, wherein the insulation layer extends to cover a side of the stacked structure.

31. The LED of claim 26, wherein the first conductive semiconductor layer includes a nitride-based semiconductor layer.

32. The LED of claim 26, wherein the convex portions of the first region and the second region have facets that are crystal planes.

33. The LED of claim 26, wherein the concave-convex patterns of the second region have pits formed on a surface of the concave-convex patterns of the second region.

34. The LED of claim 26, further comprising an interconnection layer formed over the second region and extending to cover a side of the stacked structure.

35. The LED of claim 26, further comprising a current-spreading conductive layer formed over the second conductive semiconductor layer of the stacked structure.

36. A light emitting diode (LED), comprising:

a substrate including a first, second, and third regions, each region including concave-convex patterns including concave portions and convex portions; and

unit light emitting modules formed over the first and third regions of the substrate, each unit light emitting module including a stacked structure of a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and

a grooved region formed over the second region and between two adjacent unit light emitting modules,

wherein at least one of the convex portions of the second region have a crystal plane that is different from the convex portions of the first or third region.

37. The LED of claim 36, wherein the crystal plane of the second region has less roughness than the convex portions of the first or third region.

38. The LED of claim 36, further comprising an insulation layer formed over the concave-convex portions of the second region and sides of the unit light emitting modules.

39. The LED of claim 38, wherein the insulation layer formed over the concave-convex portions of the second region has a shape corresponding to a contour of the convex portions of the second region.

40. The LED of claim 36, wherein each unit light emitting module has a mesa-etched region to expose the first conductive semiconductor layer.

41. The LED of claim 36, further comprising an interconnection layer formed over the second region of the substrate to electrically connect the two adjacent unit light emitting modules.

42. The LED of claim 36, wherein the concave-convex patterns of the second region have pits formed on a surface of the concave-convex patterns of the second region.

43. The LED of claim 36, further comprising a buffer layer formed over at least one of the first or third regions of the substrate.

44. The LED of claim 36, wherein the two adjacent unit light emitting modules are electrically connected in series.

45. The LED of claim 36, further comprising a current-spreading conductive layer disposed over the second conductive semiconductor layer of each unit light-emitting module.