DETERMINING A CELL STATE OF A RESISTIVE MEMORY CELL
First Claim
1. A device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states, the device comprising:
- a sensing circuit configured to sense a sensing voltage of the resistive memory cell and configured to output a resultant value in response to the sensing voltage which is indicative of the actual cell state;
a settling circuit configured to settle the sensing voltage to a certain target voltage representing one of the plurality M of programmable cell states;
a prebiasing circuit configured to prebiase a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage; and
a resistor coupled in parallel to the resistive memory cell, wherein the resistor is configured to reduce an effective resistance seen by the prebiasing circuit.
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Accused Products
Abstract
A device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states comprising a sensing circuit, a settling circuit, a prebiasing circuit, and a resistor coupled in parallel to the resistive memory cell, wherein the resistor is configured to reduce an effective resistance seen by the prebiasing circuit. The sensing circuit is configured to sense a sensing voltage of the resistive memory cell and output a resultant value in response to the sensing voltage which is indicative for the actual cell state. The settling circuit is configured to settle the sensing voltage to a certain target voltage representing one of the M programmable cell states. The prebiasing circuit is configured to prebiase a bitline capacitance of the resistive memory cell such the sensing voltage is close to the certain target voltage.
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Citations
15 Claims
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1. A device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states, the device comprising:
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a sensing circuit configured to sense a sensing voltage of the resistive memory cell and configured to output a resultant value in response to the sensing voltage which is indicative of the actual cell state; a settling circuit configured to settle the sensing voltage to a certain target voltage representing one of the plurality M of programmable cell states; a prebiasing circuit configured to prebiase a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage; and a resistor coupled in parallel to the resistive memory cell, wherein the resistor is configured to reduce an effective resistance seen by the prebiasing circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. (canceled)
Specification