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DETERMINING A CELL STATE OF A RESISTIVE MEMORY CELL

  • US 20150279458A1
  • Filed: 03/23/2015
  • Published: 10/01/2015
  • Est. Priority Date: 03/26/2014
  • Status: Active Grant
First Claim
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1. A device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states, the device comprising:

  • a sensing circuit configured to sense a sensing voltage of the resistive memory cell and configured to output a resultant value in response to the sensing voltage which is indicative of the actual cell state;

    a settling circuit configured to settle the sensing voltage to a certain target voltage representing one of the plurality M of programmable cell states;

    a prebiasing circuit configured to prebiase a bitline capacitance of the resistive memory cell such that the sensing voltage is close to the certain target voltage; and

    a resistor coupled in parallel to the resistive memory cell, wherein the resistor is configured to reduce an effective resistance seen by the prebiasing circuit.

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