METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• US 20150279697A1
• Filed: 03/11/2015
• Published: 10/01/2015
• Est. Priority Date: 03/27/2014
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: MATSUDA, KAZUHISA, Sasaki, Toshiyuki, Omura, Mitsuhiro
• Granted Patent: US 9,343,331 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure

Abstract

A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material is disclosed. The method includes etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas. In the second process, the second etch gas is used while a bias power is controlled to be equal to or greater than an etching threshold energy of the second film.

Claims

1. A method of manufacturing a semiconductor device provided with a stack of a first film substantially free of oxygen and a second film disposed above the first film and comprising a metal oxide containing an uneasily etched material, the method comprising:

etching the second film by a first process using a first etch gas containing a boron trichloride containing gas and by a second process following the first process using a second etch gas containing an inert gas, the second etch gas being used in the second process while controlling a bias power to be equal to or greater than an etching threshold energy of the second film.

2. The method according to claim 1, wherein the first process controls a bias power to be less than an etching threshold energy of the first film.

3. The method according to claim 1, wherein the first process and the second process are executed alternately and the alternate execution is repeated.

4. The method according to claim 1, wherein the second etch gas used in the second process further contains a fluorine-containing gas.

5. The method according to claim 1, wherein the second etch gas used in the second process is a gas mixture comprising an inert gas, a fluorine-containing gas, and a hydrogen gas.

6. The method according to claim 1, wherein the second process includes radiating hydrogen plasma and etching using the second etch gas containing an inert gas and a fluorine-containing gas.

7. The method according to claim 4, wherein the fluorine-containing gas contains at least one material selected from the group consisting of methane tetrafluoride, trifluoromethane, difluoromethane, fluoromethane, hexafluoro 1, 3 butadiene, perfluorocyclobutane, nitrogen trifluoride, and sulfur hexafluoride.

8. The method according to claim 2, wherein after the first film is exposed by removing the second film by etching, a deposit originating from the first process is formed along the first film.

9. The method according to claim 8, wherein a duration of the second process is controlled so that the deposit, being reduced by etching in the second process, remains along the first film.

10. The method according to claim 1, wherein the first film contains at least one material selected from the group consisting of silicon, tungsten, titanium, tantalum, silicon nitride, tungsten nitride, titanium nitride, and tantalum nitride.

12. The method according to claim 5, wherein the second process controls a substrate temperature to be equal to or less than 40 degrees Celsius.

11. The method according to claim wherein the uneasily etched material contains at least one material selected from the group consisting of lanthanum, yttrium, magnesium, iron, cobalt, nickel, and barium.

13. A method of manufacturing a semiconductor device, in which a metal oxide film containing an uneasily etched material is etched using reactive ion etching, comprising:

repeating an alternate execution of a first process using a first etch gas containing a boron trichloride containing gas and a second process using a second etch gas containing an inert gas to etch the metal oxide film.

14. The method according to claim 13, wherein the metal oxide film is a composite metal oxide film further containing a metal oxide which is not an uneasily etched material.

15. The method according to claim 13, wherein the second etch gas used in the second process further contains a fluorine-containing gas.

16. The method according to claim 13, wherein the second etch gas used in the second process is a gas mixture comprising an inert gas, a fluorine-containing gas, and a hydrogen gas.

17. The method according to claim 13, wherein the second process includes radiating hydrogen plasma and etching using the second etch gas containing an inert gas and a fluorine-containing gas.

18. The method according to claim 13, wherein the first process employs a first bias power and the second process employs a second bias power greater than the first bias power.

19. The method according to claim 18, further comprising etching the metal oxide film using a third etch gas containing a boron trichloride containing gas with a third bias power greater than the first bias power before repeating the alternate execution of the first process with the first bias power and the second process with the second bias power.

20. The method according to claim 16, wherein the second process controls a substrate temperature to be equal to or less than 40 degrees Celsius.