CRYSTALLINE MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. A crystalline multilayer structure comprising:
- a base substrate; and
a corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween, whereina thickness of the crystalline oxide thin film is 1 μ
m or more, and an electrical resistivity of the crystalline oxide thin film is 80 mΩ
cm or less.
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Abstract
Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.
20 Citations
9 Claims
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1. A crystalline multilayer structure comprising:
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a base substrate; and a corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween, wherein a thickness of the crystalline oxide thin film is 1 μ
m or more, and an electrical resistivity of the crystalline oxide thin film is 80 mΩ
cm or less. - View Dependent Claims (2, 3, 4, 5, 9)
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6. A method for manufacturing a crystalline multilayer structure comprising a corundum-structured crystalline oxide thin film, in which an electrical resistivity of the crystalline oxide thin film is 80 mΩ
- cm or less, the method comprising;
a first step of generating raw-material fine particles by atomizing a raw-material solution, carrying the raw-material fine particles into a film-forming chamber by carrier gas, and forming the crystalline oxide thin film having a thickness of 1 μ
m or more from the raw-material fine particles on a base substrate disposed in the film-forming chamber;and a second step of annealing the crystalline oxide thin film after the first step. - View Dependent Claims (7, 8)
- cm or less, the method comprising;
Specification