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CRYSTALLINE MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE

  • US 20150279927A1
  • Filed: 12/19/2014
  • Published: 10/01/2015
  • Est. Priority Date: 03/31/2014
  • Status: Active Grant
First Claim
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1. A crystalline multilayer structure comprising:

  • a base substrate; and

    a corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween, whereina thickness of the crystalline oxide thin film is 1 μ

    m or more, and an electrical resistivity of the crystalline oxide thin film is 80 mΩ

    cm or less.

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