SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20150280066A1
• Filed: 09/09/2014
• Published: 10/01/2015
• Est. Priority Date: 03/27/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fujimura, Kazuo, Yamasaki, Hironori, Ono, Tadashi, Kubo, Shinsaku, Nunotani, Shinji
• Granted Patent: US 9,224,919 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.

Claims

1. A semiconductor light emitting device, comprising:

a semiconductor layer including a first side, a second side opposite to the first side, and a light emitting layer;

a first electrode provided on the semiconductor layer on the second side;

a second electrode provided on the semiconductor layer on the second side;

a first insulating film provided on the second side;

a first interconnect portion provided on the first insulating film and connected to the first electrode;

a second interconnect portion provided on the first insulating film and connected to the second electrode;

a second insulating film provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer; and

an optical layer provided on the first side and on the second insulating film at the outer periphery, the optical layer being transmissive with respect to light emitted from the light emitting layer,

a plurality of protrusions and a plurality of recesses being provided at the first side, and peaks of the protrusions being positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.

2. The device according to claim 1, wherein the peaks of the protrusions are positioned closer to the second side than the end on the second insulating film side of the optical layer by not less than 1 μ

m.

3. The device according to claim 1, wherein the protrusions include first protrusions and second protrusions shorter than the first protrusions.

4. The device according to claim 1, wherein the first side is curved, and a center region of the first side sinks in toward the second side than an outer periphery region of the first side.

5. The device according to claim 1, wherein the first insulating film is also provided on a side face extending from the first side of the semiconductor layer.

6. The device according to claim 5, wherein a reflecting film is provided on the side face of the semiconductor layer via the first insulating film.

7. The device according to claim 6, wherein the reflecting film includes an aluminum film.

8. The device according to claim 6, wherein the second insulating film covers the reflecting film.

9. The device according to claim 5, wherein the side face of the semiconductor layer is inclined with respect to the first side and the second side.

10. The device according to claim 1, wherein

the first interconnect portion includes a first interconnect layer provided on the first insulating film, and a first metal pillar provided on the first interconnect layer, the first metal pillar being thicker than the first interconnect layer, and

the second interconnect portion includes a second interconnect layer provided on the first insulating film, and a second metal pillar provided on the second interconnect layer, the second metal pillar being thicker than the second interconnect layer.

11. The device according to claim 10, wherein the first interconnect layer and the second interconnect layer include an aluminum film.

12. The device according to claim 1, wherein the optical layer is a fluorescent material layer including:

a plurality of fluorescent materials excited by the light emitted from the light emitting layer and emitting a light having a different wavelength from the light emitted from the light emitting layer; and

a binder binding the plurality of fluorescent materials, the binder being transmissive with respect to the light emitted from the light emitting layer and light emitted from the fluorescent materials.

13. The device according to claim 1, further comprising a film provided between the first side of the semiconductor layer and the optical layer.

14. The device according to claim 13, wherein the film conformally covers the protrusions and the recesses of the semiconductor layer.

15. The device according to claim 13, wherein the film is an inorganic film.

16. The device according to claim 1, wherein the optical layer is provided on the first side of the semiconductor layer without via a substrate.

17. A semiconductor light emitting device comprising:

a semiconductor layer including a first side, a second side opposite to the first side, and a light emitting layer;

a first electrode provided on the semiconductor layer on the second side;

a second electrode provided on the semiconductor layer on the second side;

a first insulating film provided on the second side;

a first interconnect portion provided on the first insulating film and connected to the first electrode;

a second interconnect portion provided on the first insulating film and connected to the second electrode;

a second insulating film provided between the first interconnect portion and the second interconnect portion; and

an optical layer provided on the first side and being transmissive with respect to light emitted from the light emitting layer,

a plurality of protrusions and a plurality of recesses being provided at the first side, and the plurality of protrusions including first protrusions and second protrusions shorter than the first protrusions.

18. The device according to claim 17, wherein a height of the first protrusions is not less than two times a height of the second protrusions.

19. A semiconductor light emitting device, comprising:

a semiconductor layer including a first side, a second side opposite to the first side, and a light emitting layer;

a first electrode provided on the semiconductor layer on the second side;

a second electrode provided on the semiconductor layer on the second side;

a first insulating film provided on the second side;

a first interconnect portion provided on the first insulating film and connected to the first electrode;

a second interconnect portion provided on the first insulating film and connected to the second electrode;

a second insulating film provided between the first interconnect portion and the second interconnect portion; and

an optical layer provided on the first side and being transmissive with respect to the light emitted from the light emitting layer,

the first side being curved, and a center region of the first side sinking in toward the second side than an outer periphery region of the first side.

20. The device according to claim 19, wherein the first side is roughened.