WHITE FLIP CHIP LIGHT EMITTING DIODE (FC LED) AND FABRICATION METHOD
First Claim
1. A method for fabricating a white flip chip light emitting diode (FC LED) comprising:
- providing a flip chip (LED) die comprising a sapphire substrate having a planar surface and a plurality of sides, an n-type confinement layer on the sapphire substrate, a multiple quantum well (MQW) layer on the n-type confinement layer configured to emit electromagnetic radiation, and a p-type confinement layer on the multiple quantum well (MQW) layer;
forming reflective sidewalls on the sides of the sapphire substrate configured to prevent the electromagnetic radiation from transmitting through the sides; and
forming a wavelength conversion member on the planar surface of the sapphire substrate having a uniform thickness and an area equal to or greater than an area of the planar surface configured to change a wavelength of the electromagnetic radiation to produce white light.
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Accused Products
Abstract
A white flip chip light emitting diode (FC LED) includes a flip chip (LED) die configured to emit electromagnetic radiation; reflective sidewalls on the (LED) die; and a wavelength conversion member having a uniform thickness and a surface area greater than or equal to a footprint of the flip chip (LED) die configured to change a wavelength of the electromagnetic radiation to produce white light. A method for fabricating the white flip chip light emitting diode (FC LED) includes the steps of: providing the flip chip (LED) die; forming reflective sidewalls on the flip chip (LED) die; and forming a wavelength conversion member on the flip chip (LED) die.
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Citations
25 Claims
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1. A method for fabricating a white flip chip light emitting diode (FC LED) comprising:
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providing a flip chip (LED) die comprising a sapphire substrate having a planar surface and a plurality of sides, an n-type confinement layer on the sapphire substrate, a multiple quantum well (MQW) layer on the n-type confinement layer configured to emit electromagnetic radiation, and a p-type confinement layer on the multiple quantum well (MQW) layer; forming reflective sidewalls on the sides of the sapphire substrate configured to prevent the electromagnetic radiation from transmitting through the sides; and forming a wavelength conversion member on the planar surface of the sapphire substrate having a uniform thickness and an area equal to or greater than an area of the planar surface configured to change a wavelength of the electromagnetic radiation to produce white light. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating a white flip chip light emitting diode (FC LED) comprising:
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providing a flip chip (LED) die having an emitter side, a backside, and a footprint, the flip chip (LED) die comprising a sapphire substrate having a planar surface proximate to the emitter side, a plurality of vertical sides, and an epitaxial structure on the sapphire substrate, the epitaxial structure comprising an n-type confinement layer on the sapphire substrate, a multiple quantum well (MQW) layer on the n-type confinement layer configured to emit electromagnetic radiation, and a p-type confinement layer on the multiple quantum well (MQW) layer; forming a backside polymer film on the backside of the flip chip (LED) die configured to cover the epitaxial structure while leaving the side of the sapphire substrate exposed; forming an emitter side polymer film on the planar surface of the sapphire substrate configured to leave the sides exposed; forming reflective sidewalls on the sides of the sapphire substrate using the backside polymer film to protect the epitaxial structure and the emitter side polymer film to protect the planar surface of the sapphire substrate; removing the emitter side polymer film to expose the planar surface of the sapphire substrate; forming a wavelength conversion member on the planar surface of the sapphire substrate having a uniform thickness and a surface area greater than or equal to the footprint of the flip chip (LED) die configured to change a wavelength of the electromagnetic radiation to produce white light; and removing the backside polymer film. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A white flip chip light emitting diode (FC LED) comprising:
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a flip chip (LED) die having an emitter side, a backside, and a footprint, the flip chip (LED) die comprising a sapphire substrate having a planar surface proximate to the emitter side, a plurality of vertical sides, and an epitaxial structure on the sapphire substrate, the epitaxial structure comprising an n-type confinement layer on the sapphire substrate, a multiple quantum well (MQW) layer on the n-type confinement layer configured to emit electromagnetic radiation, and a p-type confinement layer on the multiple quantum well (MQW) layer; a plurality of reflective sidewalls on the sides of the sapphire substrate comprising a metal configured to prevent transmission of the electromagnetic radiation through the sides; and a wavelength conversion member on the planar surface of the sapphire substrate having a uniform thickness and a surface area greater than or equal to the footprint of the flip chip (LED) die configured to change a wavelength of the electromagnetic radiation to produce white light. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification