SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20150280089A1
• Filed: 03/01/2015
• Published: 10/01/2015
• Est. Priority Date: 03/27/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: OBATA, Susumu, KOJIMA, Akihiro
• Granted Patent: US 9,490,410 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a semiconductor light-emitting device includes a first electrode and a second electrode provided on the same side of a semiconductor layer. A first insulating film covers the first electrode and the second electrode. Openings in the first insulating film expose portions of the first electrode and the second electrode. Wiring portions are respectively provided on the first insulating film and in the openings in the first insulating films. A first wiring portion is connected to the first electrode and a second wiring portion is connected to the second electrode. A second insulating film is provided between a first wiring portion and a second wiring portion, with a portion of the second insulating film being provided in a gap between the first insulating film and the first wiring portion.

Claims

1. A semiconductor light-emitting device, comprising:

a semiconductor layer having a light-emitting layer between a first side and a second side of the semiconductor layer;

a first electrode on the second side of the semiconductor layer;

a second electrode on the second side of the semiconductor layer;

a first insulating film on the second side of the semiconductor layer covering the first electrode and the second electrode;

a first wiring portion on the first insulating film and connected to the first electrode through a first opening in the first insulating film;

a second wiring portion on the first insulating film and connected to the second electrode through a second opening in the first insulating film; and

a second insulating film between the first wiring portion and the second wiring portion,

wherein a first portion of the second insulating film is between the first insulating film and the first wiring portion.

2. The semiconductor light-emitting device according to claim 1, wherein

a second portion of the second insulating film is between the first insulating film and the second wiring portion.

3. The semiconductor light-emitting device according to claim 1, wherein

the first wiring portion includes a first base metal film directly contacting the first insulating film and a first wiring layer disposed on the first base metal film,

the second wiring portion includes a second base metal film directly contacting the first insulating film and a second wiring layer disposed on the second base metal film,

the first portion of the second insulating film is between an end of the first wiring layer and the first insulating film and the first base metal film is not between the end of the first wiring layer and the first insulating film, and

a second portion of the second insulating film is between an end of the second wiring layer and the first insulating film and the second base metal film is not between the end of the second wiring layer and the first insulating film.

4. The semiconductor light-emitting device according to claim 3, wherein the first base metal film and the second base metal film are each an aluminum film.

5. The semiconductor light-emitting device according to claim 3, wherein

a film thickness of the first portion of the second insulating film between the end of the first wiring layer and the first insulating film is equal to a film thickness of the first base metal film, and

a film thickness of the second portion of the second insulating film between the end of the second wiring layer and the first insulating film is equal to a film thickness of the second base metal film.

6. The semiconductor light-emitting device according to claim 3, wherein

a ratio of a length of the second insulating film between the end of the first wiring layer and the first insulating film to a film thickness of the first portion of the second insulating film is equal to or greater than 10, and

a ratio of a length of the second insulating film between the end of the second wiring layer and the first insulating film to a film thickness of the second portion of the second insulating film is equal to or greater than 10.

7. The semiconductor light-emitting device according to claim 3, wherein

the first wiring layer is thicker than the first base metal film, and

the second wiring layer is thicker than the second base metal film.

8. The semiconductor light-emitting device according to claim 3, wherein

the first wiring portion includes a first metal pillar disposed on the first wiring layer and which is thicker than the first wiring layer, and

the second wiring portion includes a second metal pillar disposed on the second wiring layer and which is thicker than the second wiring layer.

9. The semiconductor light-emitting device according to claim 1, wherein the second insulating film is a resin.

10. The semiconductor light-emitting device according to claim 1, further comprising:

an optical layer on the first side of the semiconductor layer and having transparency with respect to a wavelength of light emitted by the light-emitting layer.

11. The device according to claim 10, wherein

the optical layer is a phosphor layer including:

a plurality of phosphors which are excited by the wavelength of light emitted by the light-emitting layer emit a wavelength that is different from the wavelength of light emitted by the light-emitting layer, and

a bonding material incorporating the plurality of phosphors, the bonding material transmitting the wavelength of light emitted by the light-emitting layer and the plurality of phosphors.

12. The semiconductor light-emitting device according to claim 1, wherein

the second insulating film is provided on a side surface of the first wiring portion and a side surface of the second wiring portion, and the second insulating film extends beyond a periphery of the semiconductor layer, and

the phosphor layer extends beyond the periphery of the semiconductor layer and to cover a side surface of the second insulation film and form an outside surface of the semiconductor light-emitting device.

13. The semiconductor light-emitting device according to claim 12, wherein the optical layer further includes a transparent layer between the first side of the semiconductor layer and the phosphor layer.

14. The semiconductor light-emitting device according to claim 1, wherein the first insulation film is on a side surface of the semiconductor layer, the side surface of the semiconductor layer being contiguous with the first side.

15. The semiconductor light-emitting device according to claim 14, wherein a reflection film is on the side surface of the semiconductor layer via the first insulation film.

16. A light-emitting device, comprising:

a light-emitting layer on a first portion of a first semiconductor layer, a second semiconductor layer on the light-emitting layer with the light-emitting layer being between the second semiconductor layer and the first portion of the first semiconductor layer in a first direction, the first semiconductor layer having a second portion extending beyond an outer edge of the light-emitting layer in a second direction crossing the first direction;

a first insulating film on a surface of the second semiconductor layer, a surface of the second portion of the first semiconductor layer, an outside edge surface of the light-emitting layer, and an outside edge surface of the second semiconductor layer;

a first wiring layer on the first insulating film and electrically connected to the second semiconductor layer through a first opening in the first insulating film; and

a second insulation film filling a gap that is between the first insulating film and an edge of the first wiring layer, the second insulation film extending along the first insulation film in the second direction from the edge of the first wiring layer for a distance that is greater than a distance along the first direction across the gap.

17. A method of manufacturing a semiconductor light-emitting device, the method comprising:

forming a laminate body including a light-emitting layer between a second semiconductor layer and a first portion of a first semiconductor layer, a first electrode on the second semiconductor layer, and a second electrode on a second portion of the first semiconductor layer that is adjacent to the first portion;

forming a first insulating film on the laminate body, the first insulating film including a first opening to the first electrode and a second opening to the second electrode;

forming a base metal film on the first insulating film;

forming a first and a second wiring layer on the base metal film, the first wiring layer connected to the first electrode through the first opening and the second wiring layer connected to the second electrode through the second opening;

removing a first portion of the base metal film between the first insulating layer and the first wiring layer such than an edge of the base metal film between the first insulating layer and the first wiring layer is not aligned with an edge of the first wiring layer to form a first gap between the first wiring layer and the first insulating film;

removing a second portion of the base metal film between the first insulating layer and the second wiring layer such than an edge of the base metal film between the first insulating layer and the second wiring layer is not aligned with an edge of the second wiring layer to form a second gap between the second wiring layer and the first insulating film; and

forming a second insulating film in the first and second gaps.

18. The method according to claim 17, wherein the first and second gaps are formed by wet etching the base metal film.

19. The method according to claim 17, wherein a distance between the edge of the base metal film between the first insulating layer and the first wiring layer and the edge of the first wiring layer is greater than a distance across the first gap between the first insulating layer and the first wiring layer.

20. The method according to claim 17, further comprising:

forming a transparent layer on a surface of the laminate body; and

forming a phosphor layer on the transparent layer.