TEMPORARY ADHESIVE FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND ADHESIVE SUPPORT AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

• US 20150284603A1
• Filed: 06/18/2015
• Published: 10/08/2015
• Est. Priority Date: 12/27/2012
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: IWAI, Yu, FUJIMAKI, Kazuhiro, KOYAMA, Ichiro, NAKAMURA, Atsushi
• Application Number:
  US14/743,619
• Publication Number:
  US 20150284603A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C09J 125/14 with unsaturated esters
• CPC Class Codes: C09J 133/12 Homopolymers or copolymers of methyl methacrylate
• CPC Class Codes: C09J 133/16 Homopolymers or copolymers of esters containing halogen atoms
• CPC Class Codes: C09J 151/003 grafted on to macromolecular compounds obtained by reactions only involving unsaturated carbon-to-carbon bonds C09J151/04, C09J151/06 take precedence
• CPC Class Codes: C09J 183/06 containing silicon bound to oxygen-containing groups C09J183/12 takes precedence
• CPC Class Codes: C09J 4/00 Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
• CPC Class Codes: C09J 5/04 involving separate application of adhesive ingredients to the different surfaces to be joined
• CPC Class Codes: C09J 5/06 involving heating of the applied adhesive
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/306 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/31
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

By a temporary adhesive for production of semiconductor device containing (A) a radical polymerizable monomer or oligomer containing a fluorine atom or a silicon atom, (B) a polymer compound, and (C) a radical polymerization initiator, a temporary adhesive for production of semiconductor device, which is excellent in coating property, which reduces a problem of generation of gas therefrom in the temporary support even under high temperature condition when the member to be processed (for example, a semiconductor wafer) is subjected to a mechanical or chemical processing, and further which can easily release the temporary support for the member processed without imparting damage to the member processed even after being subjected to a process at a high temperature, and an adhesive support and a production method of semiconductor device using the same are provided.

Claims

1. A temporary adhesive for production of semiconductor device comprising (A) a radical polymerizable monomer or oligomer containing a fluorine atom or a silicon atom, (B) a polymer compound, and (C) a radical polymerization initiator.

2. The temporary adhesive for production of semiconductor device as claimed in claim 1, which further comprises (D) a radical polymerizable monomer or oligomer which is different from the radical polymerizable monomer or oligomer (A).

3. The temporary adhesive for production of semiconductor device as claimed in claim 1, wherein the radical polymerizable monomer or oligomer (A) has two or more radical polymerizable functional groups.

4. The temporary adhesive for production of semiconductor device as claimed in claim 1, wherein the radical polymerizable monomer or oligomer (A) is a radical polymerizable monomer or oligomer containing a fluorine atom.

5. The temporary adhesive for production of semiconductor device as claimed in claim 1, wherein the radical polymerization initiator (C) is a photo-radical polymerization initiator.

6. The temporary adhesive for production of semiconductor device as claimed in claim 1, which comprises as the radical polymerization initiator (C), a photo-radical polymerization initiator and a heat radical polymerization initiator.

7. An adhesive support comprising a substrate and an adhesive layer formed from the temporary adhesive for production of semiconductor device as claimed in claim 1.

8. A production method of semiconductor device having a member processed comprising:

adhering a first surface of a member to be processed to a substrate through an adhesive layer formed from the temporary adhesive for production of semiconductor device as claimed in claim 1;

conducting a mechanical or chemical processing on a second surface which is different from the first surface of the member to be processed to obtain the member processed; and

releasing the first surface of the member processed from the adhesive layer.

9. The production method of semiconductor device as claimed in claim 8, which further comprises:

irradiating active light or radiation, or heat to a surface of the adhesive layer which is to be adhered to the first surface of a member to be processed, before the adhering a first surface of a member to be processed to a substrate through the adhesive layer.

10. The production method of semiconductor device as claimed in claim 8, which further comprises:

heating the adhesive layer at a temperature from 50 to 300°

C., after the adhering a first surface of a member to be processed to a substrate through the adhesive layer and before the conducting a mechanical or chemical processing on a second surface which is different from the first surface of the member to be processed to obtain the member processed.

11. The production method of semiconductor device as claimed in claim 8, wherein the releasing the first surface of the member processed from the adhesive layer comprises:

bringing the adhesive layer into contact with a release solution.

12. The production method of semiconductor device as claimed in claim 8, wherein the member to be processed comprises a substrate to be processed and a protective layer provided on a first surface of the substrate to be processed, a surface of the protective layer opposite to the substrate to be processed is the first surface of the member to be processed, and a second surface which is different from the first surface of the substrate to be processed is the second surface of the member to be processed.

13. A kit comprising a compound for protective layer, and the temporary adhesive for production of semiconductor device as claimed in claim 1.

14. A kit comprising a compound for protective layer, a release solution, and the temporary adhesive for production of semiconductor device as claimed in claim 1.