LIGHT SENSING DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A light sensing device, comprising:
- a substrate;
a control unit, disposed on the substrate, the control unit comprising;
a gate electrode;
a gate insulation layer, disposed on the gate electrode;
an oxide semiconductor pattern, disposed on the gate insulation layer; and
a source electrode and a drain electrode, wherein the source electrode and the drain electrode are disposed corresponding to the oxide semiconductor pattern; and
a sensing unit, disposed on the substrate, and the sensing unit comprising;
a bottom electrode;
a light sensing diode, disposed on the bottom electrode; and
a top electrode, disposed on the light sensing diode, wherein the gate insulation layer partially covers the top electrode, the gate insulation layer has a first opening partially exposing the bottom electrode, and the drain electrode is electrically connected to the bottom electrode via the first opening.
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Accused Products
Abstract
A light sensing device includes a substrate, a control unit and a light sensing unit. The control unit and the light sensing unit are disposed on the substrate. The control unit includes a gate electrode, a gate insulation layer, an oxide semiconductor pattern, a source electrode and a drain electrode. The gate insulation layer is disposed on the gate electrode, and the oxide semiconductor pattern is disposed on the gate insulation layer. The light sensing unit includes a bottom electrode, a light sensing diode and a top electrode. The light sensing diode is disposed on the bottom electrode, and the top electrode is disposed on the light sensing diode. The gate insulation layer partially covers the top electrode, and the gate insulation layer has a first opening partially exposing the bottom electrode. The drain electrode is electrically connected to the bottom electrode via the first opening.
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Citations
18 Claims
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1. A light sensing device, comprising:
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a substrate; a control unit, disposed on the substrate, the control unit comprising; a gate electrode; a gate insulation layer, disposed on the gate electrode; an oxide semiconductor pattern, disposed on the gate insulation layer; and a source electrode and a drain electrode, wherein the source electrode and the drain electrode are disposed corresponding to the oxide semiconductor pattern; and a sensing unit, disposed on the substrate, and the sensing unit comprising; a bottom electrode; a light sensing diode, disposed on the bottom electrode; and a top electrode, disposed on the light sensing diode, wherein the gate insulation layer partially covers the top electrode, the gate insulation layer has a first opening partially exposing the bottom electrode, and the drain electrode is electrically connected to the bottom electrode via the first opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A manufacturing method of a light sensing device, comprising:
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providing a substrate; forming a gate electrode on the substrate; forming a light sensing unit on the substrate, wherein the light sensing unit comprises; a bottom electrode; a light sensing diode, disposed on the bottom electrode; and a top electrode, disposed on the light sensing diode; forming a gate insulation layer, covering the substrate, the gate electrode and the light sensing unit; forming an oxide semiconductor pattern on the gate insulation layer; forming a first opening in the gate insulation layer, the first opening partially exposing the bottom electrode; and forming a source electrode and a drain electrode on the gate insulation layer, wherein the gate electrode, the gate insulation layer, the oxide semiconductor pattern, the source electrode and the drain electrode are stacked to compose a control unit, and the drain electrode is electrically connected to the bottom electrode via the first opening. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification