SEMICONDUCTOR DEVICE
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Abstract
An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.
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Citations
15 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer over a substrate; forming an insulating layer over the gate electrode layer; and forming an oxide semiconductor layer over and in contact with the gate insulating layer, wherein the insulating layer is formed using a gas comprising SiF4, and wherein a hydrogen concentration in a part of the insulating layer is less than 6×
1020 atoms/cm3 and a fluorine concentration in the part of the insulating layer is greater than 1×
1021 atoms/cm3. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A method for a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer over a substrate; forming source and drain electrode layers over and in contact with the oxide semiconductor layer; and forming an insulating layer over and in contact with the oxide semiconductor layer, wherein the insulating layer is formed using a gas comprising SiF4, and wherein a hydrogen concentration in a part of the insulating layer is less than 6×
1020 atoms/cm3 and a fluorine concentration in the part of the insulating layer is greater than 1×
1021 atoms/cm3. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification