DUAL SELECTIVE DEPOSITION

• US 20150299848A1
• Filed: 04/15/2015
• Published: 10/22/2015
• Est. Priority Date: 04/16/2014
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Haukka, Suvi P., Matero, Raija H., Tois, Eva, Niskanen, Antti, Tuominen, Marko, Huotari, Hannu, Pore, Viljami J.
• Granted Patent: US 10,047,435 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/02 Pretreatment of the material to be coated C23C16/04 takes precedence
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/407 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 16/408 of copper or solid solutions thereof
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal

Abstract

Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Claims

1. A method for selectively depositing a first metallic material on a first surface of a substrate and a second dielectric material on a second surface of the same substrate, wherein the first surface is a surface of metal or semiconductor material and the second surface comprises OH, NH_x or SH_x-terminations, the method comprising:

selectively depositing the first metallic material on the first surface of the substrate relative to the second surface of the substrate; and

selectively depositing the second dielectric material on the second surface of the substrate relative to the first surface.

2. The method of claim 1, wherein selectively deposing the first metallic material and selectively depositing the second dielectric material is performed in the same reactor.

3. The method of claim 1, wherein selectively depositing the first metallic material and selectively depositing the second dielectric material is performed without an airbreak in between selectively depositing the first metallic material and selectively depositing the second material.

4. The method of claim 1, wherein selectively depositing the first metallic material and selectively depositing the second dielectric material is performed without further processing in between selectively depositing the first metallic material and selectively depositing the second material.

5. The method of claim 1, wherein the first surface comprises Cu, Si—

H, W, Ni, Co, Ru or another noble metal.

6. The method of claim 1, wherein the second surface is a surface of a dielectric material.

7. The method of claim 6, additionally comprising treating the second dielectric surface to inhibit deposition of the metallic material thereon prior to selectively depositing the first metallic material on a metal.

8. The method of claim 1, wherein the first surface is treated to inhibit deposition of the dielectric material thereon prior to selectively depositing the second dielectric material.

9. The method of claim 8, wherein the first surface is oxidized.

10. The method of claim 8, wherein the first surface is passivated.

11. The method of claim 1, wherein selectively depositing the first material comprises at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant.

12. The method of claim 11, wherein from 1 to 50 deposition cycles for selectively depositing the first material are carried out prior to selectively depositing the second material.

13. The method of claim 1, wherein selectively depositing the second material comprises at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant.

14. The method of claim 13, wherein from 1 to 50 deposition cycles for selectively depositing the second material are carried out.

15. The method of claim 1, wherein the metallic material is selectively deposited on the first surface relative to the second surface with a selectivity of at least 80%.

16. The method of claim 1, wherein the second material is selectively deposited on the second surface relative to the first surface with a selectivity of at least 80%.

17. The method of claim 1, wherein the first metallic material is selected from Sb, Ge, Ru, noble metal, W, Cu, Al, Ni, and Co.

18. The method of claim 1, wherein the second dielectric material is selected from SbO_x, GeO₂, BiO_x, MgO, SiO₂, AlO₂, and TiO₂.

19. A method for selectively depositing two different materials on two different surfaces of a substrate, wherein a first surface is a surface comprising a metal or semiconductor material and a second surface comprises OH, NH_x or SH_x-terminations, the method comprising:

selectively depositing a first material on the first surface of the substrate relative to the second surface of the substrate; and

selectively depositing a second material on the second surface of the substrate relative to the first surface,

wherein at least one of selectively depositing the first material and selectively depositing the second material is an atomic layer deposition (ALD) process.

20. The method of claim 19, wherein selectively deposing the first metallic material and selectively depositing the second dielectric material is performed in the same reactor.

21. The method of claim 19, wherein selectively depositing the first metallic material and selectively depositing the second dielectric material is performed without an airbreak in between selectively depositing the first metallic material and selectively depositing the second dielectric material.

22. The method of claim 19, wherein selectively depositing the first metallic material and selectively depositing the second dielectric material is performed without further processing in between selectively depositing the first metallic material and selectively depositing the second dielectric material.

23. The method of claim 19, wherein the first material is a layer of W, the second material is a layer of Sb, and the second surface comprises a dielectric.

24. The method of claim 19, wherein the first material is a layer of W, the first surface comprises Cu, the second material is a layer of Sb, and the second surface comprises Si—

OH terminations.

25. The method of claim 19, wherein one of selectively depositing the first material and selectively depositing the second material is a chemical vapor deposition (CVD) process.

26. The method of claim 25, wherein one of selectively depositing the first material and selectively depositing the second material comprises decomposing the precursor while contacting the substrate with the precursor.

27. The method of claim 26, wherein the first material comprises Ni, Ge, Fe, Co, or TiO₂.

28. The method of claim 27, wherein the second material is Al or Cu.

29. The method of claim 19, wherein the first material is a conducting metallic material, the first surface is a metal or semiconducting surface, the second material is a dielectric, and the second surface is a surface of a dielectric material.

30. A method for selectively depositing a first metallic material on a first metal or semiconductor surface of a substrate and a second dielectric material on a second surface of the same substrate, wherein the second surface comprises a surface of a material that is not conducting or semiconducting, the method comprising:

selectively depositing the first metallic material on the first surface of the substrate relative to the second surface of the substrate; and

selectively depositing the second dielectric material on the second surface of the substrate relative to the first surface.

31. The method of claim 30, wherein selectively deposing the first metallic material and selectively depositing the second dielectric material is performed in the same reactor.

32. The method of claim 30, wherein selectively depositing the first metallic material and selectively depositing the second dielectric material is performed without an airbreak in between selectively depositing the first metallic material and selectively depositing the second dielectric material.

33. The method of claim 30, wherein selectively depositing the first metallic material and selectively depositing the second dielectric material is performed without further processing in between in between selectively depositing the first metallic material and selectively depositing the second material.

34. The method of claim 30, wherein the first surface comprises Cu, Si—

H, Ru, Ni, Al, W, or Co.

35. The method of claim 30, wherein the second surface is a surface of a dielectric material.

36. The method of claim 30, wherein selectively depositing the second dielectric material comprises treating second surface to provide OH terminations thereon.

37. The method of claim 36, wherein selectively depositing the first metallic material comprising deactivating the second surface prior to depositing the first metallic material.

38. The method of claim 30, wherein selectively depositing the second dielectric material comprises treating the first surface to inhibit deposition of the second dielectric material thereon prior to depositing the second dielectric material.

39. The method of claim 38, wherein treating to inhibit comprises oxidizing the first surface.

40. The method of claim 38, wherein the first surface comprises Ni and treating to inhibit comprises oxidizing Ni to form Ni(O).

41. The method of claim 38, wherein treating to inhibit comprises passivating the first surface.

42. The method of claim 30, wherein selectively depositing the first metallic material comprises at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant.

43. The method of claim 42, wherein from 1 to 50 deposition cycles for selectively depositing the first metallic material are carried out prior to selectively depositing the second dielectric material.

44. The method of claim 30, wherein selectively depositing the second dielectric material comprises at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor and a second reactant.

45. The method of claim 44, wherein from 1 to 50 deposition cycles for selectively depositing the second dielectric material are carried out.

46. The method of claim 30, wherein the first metallic material is selected from Sb, Ge, Ru, noble metal, W, Cu and Al.

47. The method of claim 30, wherein the second dielectric material is selected from SbO_x, GeO₂, BiO_x, MgO, SiO₂, AlO₂, and TiO₂,

49. The method of claim 40 wherein the first surface is a metal or semiconductor surface and the second surface comprises OH, NH_x or SH_x-terminations.

48. A method for selectively depositing tungsten on a first surface of a substrate and antimony on a second different surface of the same substrate, the method comprising:

selectively depositing the tungsten on the first surface of the substrate relative to the second surface of the substrate; and

selectively depositing the antimony on the second surface of the substrate relative to the first surface.

50. A method for selectively depositing a material comprising nickel on a first surface of a substrate and germanium oxide on a second surface different of the same substrate, the method comprising:

selectively depositing the material comprising nickel on the first surface of the substrate relative to the second surface of the substrate; and

selectively depositing the germanium on the second surface of the substrate relative to the first surface.

51. The method of claim 50, wherein

selectively depositing the material comprising nickel comprises providing the first surface with OH-terminations and the second surface with H-terminations;

and

selectively depositing the germanium oxide comprises, after selectively depositing the nickel, oxidizing a surface of the nickel and the second surface.

52. A method for selectively depositing ruthenium on a first surface of a substrate and germanium oxide or silicon dioxide on a second surface of the same substrate, the method comprising:

selectively depositing the ruthenium on the first surface of the substrate relative to the second surface of the substrate; and

selectively depositing the germanium oxide or the silicon dioxide on the second surface of the substrate relative to the first surface.

54. The method of claim 52, wherein the first surface is metal.

55. The method of claim 52, wherein the second surface is an oxide surface.

56. The method of claim 52, wherein the oxide surface comprises a dielectric surface material having OH surface terminations.

57. The method of claim 52, wherein

selectively depositing the germanium oxide or the silicon dioxide on the second surface of the substrate comprises using a passivation precursor.

58. The method of claim 57, wherein the passivation precursor selected from HCOOH, a precursor comprising an alkylamine, or both.

53. The method of claim 53, wherein

selectively depositing the ruthenium is done prior selectively depositing the germanium oxide or silicon dioxide.