METHOD AND APPARATUS FOR PREPARING A SUBSTRATE WITH A SEMI-NOBLE METAL LAYER

• US 20150299886A1
• Filed: 04/18/2014
• Published: 10/22/2015
• Est. Priority Date: 04/18/2014
• Status: Abandoned Application

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Spurlin, Tighe A., Reid, Jonathan D., Porter, David, Doubina, Natalia V., Rigsby, Matthew A.
• Application Number:
  US14/256,671
• Publication Number:
  US 20150299886A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C25D 3/38 of copper
• CPC Class Codes: C25D 3/58 containing more than 50% by weight of copper
• CPC Class Codes: C25D 5/10 Electroplating with more than one layer of the same or of different metals for bearings C25D7/10
• CPC Class Codes: C25D 5/18 Electroplating using modulated, pulsed or reversing current
• CPC Class Codes: C25D 5/34 Pretreatment of metallic surfaces to be electroplated
• CPC Class Codes: C25D 5/50 by heat-treatment
• CPC Class Codes: C25D 5/611 Smooth layers
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/67161 characterized by the layout of the process chambers
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76862 Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 2221/1089 Stacks of seed layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Method and apparatus for preparing a substrate with a semi-noble metal layer are disclosed. The substrate can be pretreated so that a metal oxide surface on the semi-noble metal layer can be reduced to a modified metal surface integrated with the semi-noble metal layer. The substrate can be pretreated using a remote plasma treatment. A copper seed layer can be formed on the semi-noble metal layer using either an acidic or alkaline bath with a plating solution including either at least two copper complexing agents with varying dentacity or a single hexadentate copper complexing agent that is in excess of the copper source. The copper complexing agents can include a hexadentate ligand and a bidentate ligand. In some embodiments, a bulk layer of copper can be subsequently deposited on the copper seed layer using an acidic bath.

Claims

1. A method of preparing a substrate with a semi-noble metal layer for plating copper on the substrate, the method comprising:

providing a substrate with a semi-noble metal layer formed thereon in a processing chamber;

exposing the semi-noble metal layer to a reducing treatment under conditions that reduce an oxide of the metal to a metal in the form of a film integrated with the semi-noble metal layer; and

depositing a copper seed layer on the semi-noble metal layer using a plating bath with a plating solution, wherein the plating solution includes a copper source and either at least two copper complexing agents having at least two different polydentate ligands or a single hexadentate copper complexing agent, wherein the single hexadentate copper complexing agent has a concentration at least twice that of the copper source.

2. The method of claim 1, wherein at least one of the polydentate ligands is ethylenediaminetetraacetic acid (EDTA).

3. The method of claim 1, wherein at least one of the polydentate ligands is 2, 2′

-bipyridine.

4. The method of claim 1, wherein the semi-noble metal layer includes cobalt.

5. The method of claim 1, wherein exposing the semi-noble metal layer to a reducing treatment comprises:

forming a remote plasma of a reducing gas species in a remote plasma source, wherein the remote plasma comprises one or more of;

radicals, ions, and ultraviolet (UV) radiation from the reducing gas species; and

exposing the semi-noble metal layer to the remote plasma.

6. The method of claim 5, wherein the reducing gas species includes hydrogen.

7. The method of claim 5, further comprising:

exposing the substrate to a cooling gas after exposing the semi-noble metal layer to the remote plasma.

8. The method of claim 1, wherein exposing the semi-noble metal layer includes contacting at least the oxide of the metal with a solution including a reducing agent.

9. The method of claim 1, further comprising:

after exposing at least the semi-noble metal layer to a reducing treatment, transferring the substrate to the plating bath containing the plating solution.

10. The method of claim 1, further comprising:

heating a substrate support holding the substrate to a processing temperature between about 0°

C. and about 400°

C.

11. The method of claim 1 wherein a thickness of the copper seed layer is between about 40 Å

and about 80 Å

.

12. The method of claim 1 wherein a plating surface of the substrate includes vias having a height to width aspect ratio of greater than about 5:

1.

13. The method of claim 1, wherein the plating solution has a pH between about 3.0 and about 13.5.

14. The method of claim 1, wherein a portion of the semi-noble metal layer has been converted to an oxide of the metal.

15. The method of claim 1, further comprising:

depositing a bulk layer of copper on the copper seed layer using a plating bath different than the plating bath for the deposition of the copper seed layer.

16. The method of claim 15, further comprising:

reflowing the copper seed layer before depositing the bulk layer of copper, wherein the plating bath for the deposition of the copper seed layer is an alkaline bath and the plating bath for the deposition of the bulk layer of copper is an acidic bath.

17. An apparatus for preparing a substrate with a semi-noble metal layer, the apparatus comprising:

a processing chamber;

a substrate support for holding the substrate in the processing chamber;

a controller configured to provide instructions for performing the following operations;

(a) providing a substrate in a processing chamber;

(b) exposing the substrate to a reducing treatment under conditions that reduce an oxide of a metal to a metal in the form of a film integrated with a semi-noble metal layer disposed on the substrate; and

(c) depositing a copper seed layer on the semi-noble metal layer using a plating bath with a plating solution, wherein the plating solution includes a copper source and either at least two copper complexing agents having at least two different polydentate ligands or a single hexadentate copper complexing agent, wherein the single hexadentate copper complexing agent has a concentration at least twice that of the copper source.

18. The apparatus of claim of claim 17, wherein at least one of the polydentate ligands is ethylenediaminetetraacetic acid (EDTA).

19. The apparatus of claim 17, wherein at least one of the polydentate ligands is 2,2′

-bipyridine.

20. The apparatus of claim 17, wherein the semi-noble metal layer includes cobalt.

21. The apparatus of claim 17, wherein exposing the semi-noble metal layer to a reducing treatment comprises:

forming a remote plasma of a reducing gas species in a remote plasma source, wherein the remote plasma comprises one or more of;

radicals, ions, and ultraviolet (UV radiation from the reducing gas species; and

exposing the semi-noble metal layer to the remote plasma.

22. The apparatus of claim 21, wherein the reducing gas species includes hydrogen.

23. The apparatus of claim 17, wherein the plating solution has a pH between about 3.0 and about 13.5.

24. The apparatus of claim 17, wherein the controller is configured to farther perform:

depositing a bulk layer of copper on the copper seed layer using a plating bath different than the plating bath for the deposition of the copper seed layer.

25. The apparatus of claim 24, wherein the controller is configured to further perform:

reflowing the copper seed layer before depositing the bulk layer of copper, wherein the plating bath for the deposition of the copper seed layer is an alkaline bath and the plating bath for the deposition of the bulk layer of copper is an acidic bath.