Substrate Processing Apparatus

• US 20150303037A1
• Filed: 12/26/2013
• Published: 10/22/2015
• Est. Priority Date: 12/27/2012
• Status: Active Grant

• Current Assignee: Jusung Engineering Company Limited
• Original Assignee: MooHan Co., Ltd. (Jusung Engineering Company Limited)
• Inventors: HA, Eun Geu, KIM, Sung Kook, KIM, Hyun O, PARK, Il Young
• Granted Patent: US 11,075,060 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32541 Shape

Abstract

Disclosed is an apparatus for processing substrate which prevents a plasma discharge from being transferred to a substrate so as to minimize damages on the substrate and also minimize deterioration in quality of a thin film deposited on the substrate, wherein the apparatus may include a process chamber for providing a reaction space, and a gas distribution module for dissociating processing gas by the use of plasma, and distributing the dissociated processing gas onto a substrate, wherein the gas distribution module may include a lower frame having a plurality of electrode inserting portions, an upper frame having a plurality of protruding electrodes and processing gas distribution holes, and an insulating plate having a plurality of electrode penetrating portions.

Claims

1. A substrate processing apparatus comprising:

a process chamber for providing a reaction space; and

a gas distribution module for dissociating processing gas by the use of plasma, and distributing the dissociated processing gas onto a substrate, wherein the gas distribution module is provided in the process chamber,

wherein the gas distribution module includes;

a lower frame having a plurality of electrode inserting portions;

an upper frame having a plurality of protruding electrodes respectively inserted into the plurality of electrode inserting portions so as to provide a gap space, and a plurality of processing gas distribution holes formed in the plurality of protruding electrodes so as to distribute the processing gas onto the substrate; and

an insulating plate, formed between the lower frame and the upper frame, having a plurality of electrode penetrating portions, wherein the plurality of protruding electrodes penetrating through the electrode penetrating portions are respectively inserted into the plurality of electrode inserting portions.

2. The substrate processing apparatus according to claim 1, wherein the upper frame, the insulating plate and the lower frame are formed as one module.

3. The substrate processing apparatus according to claim 1, wherein an interval between the protruding electrode and the electrode inserting portion is smaller than an interval between a lower surface of the protruding electrode and the substrate.

4. The substrate processing apparatus according to claim 1, wherein the upper frame overlapping with the gap space is provided with a plurality of dilution gas distribution holes which distribute dilution gas for forming the plasma to the gap space.

5. The substrate processing apparatus according to claim 4, wherein the upper frame is electrically grounded, and the plasma is generated by the dilution gas distributed to the gap space through the plurality of dilution gas distribution holes, and plasma power supplied to the lower frame.

6. The substrate processing apparatus according to claim 4, wherein the lower frame is electrically grounded, and the plasma is generated by the dilution gas distributed to the gap space through the plurality of dilution gas distribution holes, and plasma power supplied to the upper frame.

7. The substrate processing apparatus according to claim 1, wherein an interval between the substrate and a lower surface of each of the protruding electrodes is the same as or different from an interval between the substrate and a lower surface of the lower frame.

8. The substrate processing apparatus according to claim 1, wherein each of the electrode inserting portions has a circle or polygonal shaped cross section, and each protruding electrode whose cross section is the same as that of the electrode inserting portion is surrounded by the electrode inserting portion.

9. The substrate processing apparatus according to claim 8, wherein the plurality of electrode inserting portions are arranged in a lattice configuration.

10. The substrate processing apparatus according to claim 8, wherein the plurality of electrode inserting portions are arranged at fixed intervals in each of ‘

n’

columns, and the plurality of electrode inserting portions arranged in the odd-numbered column and the even-numbered column are staggered.

11. The substrate processing apparatus according to claim 5, wherein each of the electrode inserting portions has a circle or polygonal shaped cross section, and each protruding electrode whose cross section is the same as that of the electrode inserting portion is surrounded by the electrode inserting portion.

12. The substrate processing apparatus according to claim 11, wherein the plurality of electrode inserting portions are arranged in a lattice configuration.

13. The substrate processing apparatus according to claim 11, wherein the plurality of electrode inserting portions are arranged at fixed intervals in each of ‘

n’

columns, and the plurality of electrode inserting portions arranged in the odd-numbered column and the even-numbered column are staggered.

14. The substrate processing apparatus according to claim 6, wherein each of the electrode inserting portions has a circle or polygonal shaped cross section, and each protruding electrode whose cross section is the same as that of the electrode inserting portion is surrounded by the electrode inserting portion.

15. The substrate processing apparatus according to claim 14, wherein the plurality of electrode inserting portions are arranged in a lattice configuration.

16. The substrate processing apparatus according to claim 14, wherein the plurality of electrode inserting portions are arranged at fixed intervals in each of ‘

n’

columns, and the plurality of electrode inserting portions arranged in the odd-numbered column and the even-numbered column are staggered.