METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- forming a film on a substrate by performing a cycle a prescribed number of times, the a cycle including;
(a) supplying a source gas to the substrate in a process chamber;
(b) exhausting the source gas remained in the process chamber;
(c) supplying a reactive gas to the substrate in the process chamber; and
(d) exhausting the reactive gas remained in the process chamber,wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.
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Accused Products
Abstract
There is provided a method for manufacturing a semiconductor device, including: forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying a reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.
9 Citations
12 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a film on a substrate by performing a cycle a prescribed number of times, the a cycle including; (a) supplying a source gas to the substrate in a process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying a reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A substrate processing apparatus, comprising:
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a process chamber configured to house a substrate; a source gas supply system configured to supply a source gas into the process chamber; a reactive gas supply system configured to supply a reactive gas into the process chamber; an inert gas supply system configured to supply an inert gas into the process chamber; an exhaust system configured to exhaust the process chamber; and a controller configured to control the source gas supply system, the reactive gas supply system, the inert gas supply system, and the exhaust system, so that forming a film on the substrate is performed by performing a cycle a prescribed number of times, the cycle including; (a) supplying the source gas to the substrate in the process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying the reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter the inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.
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12. A non-transitory computer readable recording medium recording a program configured to cause a computer to execute forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including:
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(a) supplying a source gas to the substrate in a process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying a reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.
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Specification