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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

  • US 20150303054A1
  • Filed: 11/11/2013
  • Published: 10/22/2015
  • Est. Priority Date: 11/26/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a film on a substrate by performing a cycle a prescribed number of times, the a cycle including;

    (a) supplying a source gas to the substrate in a process chamber;

    (b) exhausting the source gas remained in the process chamber;

    (c) supplying a reactive gas to the substrate in the process chamber; and

    (d) exhausting the reactive gas remained in the process chamber,wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.

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