RESIST FILM FORMING DEVICE AND METHOD, CONDUCTIVE FILM FORMING AND CIRCUIT FORMING DEVICE AND METHOD, ELECTROMAGNETIC WAVE SHIELD FORMING DEVICE AND METHOD, SHORTWAVE HIGH-TRANSMISSIBILITY INSULATION FILM FORMING DEVICE AND METHOD, FLUORESCENT LIGHT BODY FILM FORMING DEVICE AND METHOD, TRACE MATERIAL COMBINING DEVICE AND METHOD, RESIN MOLDING DEVICE, RESIN MOLDING METHOD, THIN FILM FORMING DEVICE, ORGANIC ELECTROLUMINESCENCE ELEMENT, BUMP FORMING DEVICE AND METHOD, WIRING FORMING DEVICE AND METHOD, AND WIRING STRUCTURE BODY

• US 20150303151A1
• Filed: 11/11/2013
• Published: 10/22/2015
• Est. Priority Date: 11/30/2012
• Status: Active Grant

• Current Assignee: Apic Yamada Corporation (Yamaha Corporation)
• Original Assignee: Apic Yamada Corporation (Yamaha Corporation)
• Inventors: KOBAYASHI, Kazuhiko, SUDA, Keisuke
• Granted Patent: US 9,831,187 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B05B 5/025 Discharge apparatus, e.g. electrostatic spray guns
• CPC Class Codes: B05B 5/14 specially adapted for coating continuously moving elongated bodies, e.g. wires, strips, pipes
• CPC Class Codes: B29C 33/58 Applying the releasing agents
• CPC Class Codes: B29C 33/72 Cleaning extruder parts B29C48/27; in general B08B7/00
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 7/164 using electric, electrostatic or magnetic means; powder coating
• CPC Class Codes: H01L 21/3205 Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers manufacture of electrodes H01L21/28
• CPC Class Codes: H01L 21/321 After treatment
• CPC Class Codes: H01L 21/326 Application of electric currents or fields, e.g. for electroforming H01L21/20 - H01L21/288 and H01L21/302 - H01L21/324 take precedence
• CPC Class Codes: H01L 21/6715 Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/76 Apparatus for connecting with build-up interconnects
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2225/06524 Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06537 : Electromagnetic shielding
• CPC Class Codes: H01L 2225/06562 : at least one device in the stack being rotated or offset
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/76 : Apparatus for connecting with build-up interconnects
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H05K 1/11 : Printed elements for providing electric connections to or between printed circuits

Abstract

Provided is a resist film forming device which uses an electrostatic spray device which is capable of forming a thin film with a uniform thickness on a workpiece. A resist film forming device (100), which forms a resist film (108) on a substrate by electrostatic spraying, comprises: a nozzle (102) which, upon application of a prescribed voltage, sprays liquid particles which form the raw material for a resist film (108) toward a substrate (105) having stepped portions (105a); a driving means (111) for causing relative movement of the substrate (105) or the nozzle (102); and a control means (110) for controlling such that the resist film (108) is formed on the substrate (105) having the stepped portions (105a) by the liquid particles.

Claims

1-5. -5. (canceled)

6. A conductive film forming method for forming a conductive film for electromagnetic shielding on a semiconductor package by electrostatic spraying or electrostatic coating, comprising:

applying a prescribed voltage to a nozzle;

spraying or applying particles of a liquid agent as ingredients of the conductive film from the nozzle toward or to the semiconductor package; and

forming the conductive film on the semiconductor package using the particles of the liquid agent.

7-8. -8. (canceled)

9. A short-wavelength, high-transmittance insulative film forming method for forming a short-wavelength, high-transmittance insulative film on a work by electrostatic spraying or electrostatic coating, comprising:

producing a liquid agent by dispersing particles as ingredients of the short-wavelength, high-transmittance insulative film in a solvent;

applying a prescribed voltage to a nozzle;

spraying or applying the liquid agent from the nozzle toward or to the work; and

forming the short-wavelength, high-transmittance insulative film on the work by melting the liquid agent by heating it at a prescribed temperature.

10-14. -14. (canceled)

15. Au insulating film forming method for forming an insulating film on a work by electrostatic spraying or electrostatic coating, comprising:

applying a prescribed voltage to a nozzle;

spraying or applying particles of a liquid agent as ingredients of the insulating film from the nozzle toward or to the work; and

forming the insulating film on the work using the particles of the liquid agent.

16-21. -21. (canceled)

22. A resin molding method, comprising:

forming a thin film of a release agent on a die by applying a prescribed voltage between a nozzle and the die and thereby spraying the release agent electrostatically from the nozzle toward the die;

clamping a molding subject work using the die on which the thin film of the release agent is formed; and

performing resin molding by supplying a resin to the molding subject work.

23. A resin molding method, comprising:

irradiating a die with laser light;

forming a thin film of a release agent on a die by applying a prescribed voltage between a nozzle and the die and thereby spraying the release agent electrostatically from the nozzle toward the die;

clamping a molding subject work using the die on which the thin film of the release agent is formed; and

performing resin molding by supplying a resin to the molding subject work.

24-35. -35. (canceled)

36. A bump forming method for forming a bump on a work by electrostatic coating, comprising:

applying a pulse voltage between a nozzle and the work; and

forming the bump of 3 to 10 μ

m in diameter on the work by coating the work with a liquid agent as ingredients of the bump at a prescribed position by performing electrostatic coating according to the pulse voltage.

37-40. -40. (canceled)

41. An interconnection forming method for forming an interconnection on a work by at least one of electrostatic spraying and electrostatic coating, comprising:

applying a first voltage between a first nozzle and the work;

forming an insulating film on the work using a first liquid agent as first ingredients of the interconnection by spraying the first liquid agent toward the work according to the first voltage;

applying a second voltage between a second nozzle and the work; and

forming a conductive film on the work using a second liquid agent as second ingredients of the interconnection by coating the work with the second liquid agent according to the second voltage.

42. A wiring structural body,

wherein a wiring structure of at least one of bumps and interconnections is formed by at least one of electrostatic spraying and electrostatic coating.