PASSIVATED UPSTANDING NANOSTRUCTURES AND METHODS OF MAKING THE SAME
First Claim
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1. A device comprising:
- a substrate;
one or more of a nanostructure extending essentially perpendicularly from the substrate;
wherein the nanostructure comprises a core of a doped semiconductor of a first type, a first layer comprising a lightly doped amorphous semiconductor or an intrinsic amorphous semiconductor, and a second layer comprising a heavily doped amorphous semiconductor layer of a second type opposite from the first type, wherein the first layer is disposed on the core and the second layer is disposed on the first layer;
wherein the first layer passivates at least a surface of the core;
wherein the first layer is disposed on an end surface of the core away from the substrate;
wherein sidewalls of the core are at least partially covered by an electrically insulating layer;
wherein the first layer and the second layer are coextensive with the electrically insulating layer in at least a direction parallel to the substrate.
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Abstract
Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.
51 Citations
19 Claims
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1. A device comprising:
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a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor of a first type, a first layer comprising a lightly doped amorphous semiconductor or an intrinsic amorphous semiconductor, and a second layer comprising a heavily doped amorphous semiconductor layer of a second type opposite from the first type, wherein the first layer is disposed on the core and the second layer is disposed on the first layer; wherein the first layer passivates at least a surface of the core; wherein the first layer is disposed on an end surface of the core away from the substrate; wherein sidewalls of the core are at least partially covered by an electrically insulating layer; wherein the first layer and the second layer are coextensive with the electrically insulating layer in at least a direction parallel to the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification