SOLID-STATE REPLACEMENT FOR TUBE-BASED MODULATORS

• US 20150303914A1
• Filed: 01/27/2015
• Published: 10/22/2015
• Est. Priority Date: 01/27/2014
• Status: Active Grant

• Current Assignee: EHT Ventures LLC
• Original Assignee: Eagle Harbor Technolologies, Inc.
• Inventors: Miller, Kenneth E., Prager, James, Ziemba, Timothy, Carscadden, John
• Granted Patent: US 10,790,816 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H03K 17/0406 in composite switches
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

Embodiments described herein include a solid-state switch tube replacement for the radar system such as, for example, the SPY-1 radar system. Some embodiments provide for a technology for the precision switching that enables IGBT power modules to operate robustly in a series configuration and/or a parallel configuration to produce precision switching at high voltage (e.g., 20 kV and above) and high frequencies (e.g., 1 MHz and above).

Claims

1. A solid-state switch comprising:

a plurality of IGBTs;

a plurality of driver circuits, wherein each driver circuit is coupled with one IGBT of the plurality of IGBTs;

a plurality of snubber circuits, wherein each snubber circuit is coupled with one IGBT of the plurality of IGBTs; and

a radar connection that couples the solid-state switch with a radar.

2. The solid-state switch according to claim 1, wherein the radar connection circuit is configured to couple the solid-state switch with a SPY-1 radar.

3. The solid-state switch according to claim 1, wherein the solid-state switch produces 1.2 kV at 600 A.

4. The solid-state switch according to claim 1, wherein the solid-state switch produces output currents greater than 2000 A for 1 ms while switching at frequencies greater than 1 MHz.

5. The solid-state switch according to claim 1, wherein the solid-state switch produces an output with rise times and/or fall times of less than 40 ns.

6. The solid-state switch according to claim 1, wherein the solid-state switch produces an output with a pulse width modulation greater than 1 MHz.

7. The solid-state switch according to claim 1, wherein the solid-state switch comprises a fiber optic isolation input circuit.

8. The solid-state switch according to claim 1, wherein the solid-state switch produces an output

9. The solid-state switch according to claim 1, wherein the solid-state switch produces an output with high voltage isolation greater than 30 kV.

10. The solid-state switch according to claim 1, wherein the solid-state switch produces an output with high switching efficiency of greater than 90% at high frequencies.

11. The solid-state switch according to claim 1, wherein the solid-state switch produces an output with jitter below 10 ns.