DRY CLEANING METHOD AND PLASMA PROCESSING APPARATUS

• US 20150311045A1
• Filed: 04/21/2015
• Published: 10/29/2015
• Est. Priority Date: 04/28/2014
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: ISHIKAWA, Yoshio, GAO, Jun, KAINO, Hidemasa
• Application Number:
  US14/691,656
• Publication Number:
  US 20150311045A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32467 Material
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts

Abstract

A dry cleaning method is provided that is implemented by a plasma processing apparatus including a processing chamber having a member containing chromium, a mounting table arranged within the processing chamber and configured to hold a substrate, and a gas supply source configured to supply gas into the processing chamber. The dry cleaning method includes a first process step of supplying a first cleaning gas containing oxygen into the processing chamber, supplying a high frequency power or a microwave power into the processing chamber, and generating a plasma from the first cleaning gas; and a second process step of supplying a second cleaning gas containing bromine into the processing chamber after the first process step.

Claims

1. A dry cleaning method implemented by a plasma processing apparatus that includes a processing chamber including a member containing chromium, a mounting table arranged within the processing chamber and configured to hold a substrate, and a gas supply source configured to supply gas into the processing chamber, the dry cleaning method comprising:

a first process step of supplying a first cleaning gas containing oxygen into the processing chamber, supplying a high frequency power or a microwave power into the processing chamber, and generating a plasma from the first cleaning gas; and

a second process step of supplying a second cleaning gas containing bromine into the processing chamber after the first process step.

2. The dry cleaning method as claimed in claim 1, wherein the second process step includes supplying a high frequency power or a microwave power into the processing chamber and generating a plasma from the second cleaning gas.

3. The dry cleaning method as claimed in claim 1, wherein the second process step includes reducing chromium oxide that is generated in the first process step and removing the chromium oxide from the processing chamber.

4. A plasma processing apparatus that is configured to perform the dry cleaning method of claim 1, supply a processing gas into the processing chamber after the processing chamber is cleaned by implementing the dry cleaning method, and perform a plasma process on a substrate using a plasma generated from the processing gas.