METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MAINTAINING DEPOSITION APPARATUS
First Claim
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1. A method of manufacturing a semiconductor device, comprising:
- forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber;
disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and
forming a thin film for the semiconductor device on the wafer.
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Abstract
A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.
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Citations
21 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of maintaining a deposition apparatus, comprising:
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evacuating a process chamber after a deposition process is stopped and a wafer is unloaded from the process chamber; and supplying an aluminum source and a nitrogen source to an interior of the process chamber. - View Dependent Claims (17, 18)
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19. A method of manufacturing a semiconductor device, comprising:
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cutting supply of a source gas for a deposition process to an interior of a process chamber; unloading a first wafer from the process chamber; forming an aluminum compound film on a surface of the process chamber contacting the source gas, after the unloading of the first wafer; loading a second wafer in the process chamber, after forming the aluminum compound film; and resuming the supply of the source gas and depositing a thin film for a semiconductor device on the second wafer. - View Dependent Claims (20)
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21-26. -26. (canceled)
Specification