SCRIBE LINE STRUCTURE AND METHOD OF FORMING SAME

• US 20150311132A1
• Filed: 04/28/2014
• Published: 10/29/2015
• Est. Priority Date: 04/28/2014
• Status: Abandoned Application

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Kuo, Hung-Jui, Chen, Hsien-Wei
• Application Number:
  US14/263,732
• Publication Number:
  US 20150311132A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/056 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/3192 Multilayer coating
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49833 : the chip support structure consisting of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 : Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect

Abstract

An embodiment device includes a die, a molding compound extending along sidewalls of the die, and a first polymer layer over the die and the molding compound. The first polymer layer has a first lateral dimension. The device further includes a second polymer layer over the first polymer layer. The second polymer layer has a second lateral dimension, where the second lateral dimension is less than the first lateral dimension.

Claims

1-14. -14. (canceled)

15. A method comprising:

patterning a first portion of a scribe line in a first polymer layer;

forming a redistribution line (RDL) over the first polymer layer;

forming a second polymer layer over the RDL and the first polymer layer; and

patterning a second portion of the scribe line in the second polymer layer, wherein the first and the second portions are connected, and wherein the second portion of the scribe line is wider than the first portion of the scribe line.

16. The method of claim 15, wherein patterning the first portion of the scribe line in the first polymer layer comprises a photolithography process.

17. The method of claim 16, wherein after the photolithography process, performing a curing process on the first polymer layer, wherein after the curing process, the first polymer layer is not a photoresist.

18. The method of claim 15, wherein forming the second polymer layer comprises blanket depositing the second polymer layer, and wherein patterning the second portion of the scribe line in the second polymer layer comprises removing portions of the second polymer layer in the first portion of the scribe line.

19. The method of claim 15, wherein forming the second polymer layer comprises forming the second polymer layer thicker than the first polymer layer.

20. The method of claim 15, further comprising forming the first polymer layer over a third polymer layer, wherein the scribe line does not extend into the third polymer layer.

21. A method comprising:

forming a first polymer layer over a first die and a second die;

patterning first opening extending through the first polymer layer, wherein the first opening is aligned with an area between the first die and the second die;

forming a second polymer layer over the first polymer layer, wherein the second polymer layer is thicker than the first polymer layer; and

patterning a second opening extending through the second polymer layer, wherein the second opening is connected to the first opening.

22. The method of claim 21, wherein the second opening is wider than the first opening, and wherein the second opening exposes a top surface of the first polymer layer.

23. The method of claim 21 further comprising:

forming a third polymer layer over the second polymer layer, wherein the third polymer layer is thicker than the second polymer layer; and

patterning a third opening in the third polymer layer connected to the second opening.

24. The method of claim 23, wherein the third opening is wider than the second opening, and wherein the third opening exposes a top surface of the second polymer layer.

25. The method of claim 21, wherein forming the first polymer layer comprises forming the first polymer layer over a fourth polymer layer disposed over the first die and the second die, and wherein patterning the first opening comprises exposing a continuous portion of the fourth polymer layer extending from a first sidewalls of the first opening to a second sidewall of the first opening.

26. The method of claim 21 further comprising:

forming a photoresist over the second polymer layer and extending into the first opening and the second opening; and

using the photoresist to define an under bump metallurgy (UBM) over the second polymer layer.

27. The method of claim 21 further comprising separating the first die from the second die along a scribe line defined by the first opening and the second opening.

28. A method comprising:

providing a first die, a second die, and a molding compound disposed between the first die and the second die;

forming a first polymer layer over the first die and the second die;

patterning a first opening in the first polymer layer using a photolithography process, wherein the first opening is disposed directly over the molding compound;

after patterning the first opening, curing the first polymer layer;

forming a second polymer layer over the first polymer layer;

patterning a second opening in the second polymer layer, wherein the second opening is connected to the first opening, and wherein sidewalls of the second opening are spaced apart from sidewalls of the first opening; and

separating the first die from the second die along a scribe line defined by the first opening and the second opening.

29. The method of claim 28, forming the first polymer layer comprises forming a photosensitive layer, and wherein after curing the first polymer layer, the first polymer layer is no longer photosensitive.

30. The method of claim 28, wherein curing the first polymer layer comprises heating the first polymer layer.

31. The method of claim 28, wherein forming the second polymer layer comprises forming the second polymer layer thicker than the first polymer layer.

32. The method of claim 28, wherein forming the first polymer layer comprises forming the first polymer layer over a third polymer layer disposed over the molding compound, wherein the scribe line does not extend through the third polymer layer.

33. The method of claim 28 further comprising forming a redistribution line between the first polymer layer and the second polymer layer.

34. The method of claim 28 wherein forming the second polymer layer comprises forming a portion of the second polymer layer in the first opening, and wherein patterning the second opening comprises removing the portion of the second polymer layer in the first opening.