CMOS-MEMS INTEGRATION BY SEQUENTIAL BONDING METHOD
First Claim
1. A method for bonding a first wafer and a second wafer, comprising:
- depositing a bond pad on a metal on the first wafer, the first wafer including an integrated circuit, and the second wafer including a MEMS device; and
sequentially bonding the first wafer to the second wafer utilizing first and second temperatures;
wherein the second wafer is bonded to the bond pad at the first temperature and wherein the bond pad and the metal are bonded at the second temperature.
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Accused Products
Abstract
Methods for bonding two wafers are disclosed. In one aspect, a first wafer includes an integrated circuit and the second wafer including a MEMS device. The method comprises depositing a bond pad on a metal on the first wafer and sequentially bonding the first wafer to the second wafer utilizing first and second temperatures. The second wafer is bonded to the bond pad at the first temperature and the bond pad and the metal are bonded at the second temperature. In another aspect, a first wafer including an integrated circuit, the second wafer includes a MEMS device. The method comprises depositing a bond pad on a metal on one of the first wafer and the second wafer and bonding the first wafer to the second wafer at a first temperature via a direct bond interface. The method includes bonding the bond pad to the metal at a second temperature.
12 Citations
21 Claims
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1. A method for bonding a first wafer and a second wafer, comprising:
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depositing a bond pad on a metal on the first wafer, the first wafer including an integrated circuit, and the second wafer including a MEMS device; and sequentially bonding the first wafer to the second wafer utilizing first and second temperatures;
wherein the second wafer is bonded to the bond pad at the first temperature and wherein the bond pad and the metal are bonded at the second temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for bonding a first wafer and a second wafer, comprising:
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depositing a bond pad on a metal on one of the first wafer and the second wafer, the first wafer including an integrated circuit, the second wafer including a MEMS device; bonding the first wafer to the second wafer at a first temperature via a direct bond interface; and bonding the bond pad to the metal at a second temperature. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification