MULTIPLE FIN FINFET WITH LOW-RESISTANCE GATE STRUCTURE
First Claim
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1. A semiconductor structure, comprising:
- a semiconductor substrate;
a plurality of fins formed in the semiconductor substrate;
a gate disposed over the plurality of fins;
a plurality of contacts in direct physical contact with the gate and directly over the plurality of fins; and
a metallization line disposed over the plurality of contacts, wherein the metallization line is in electrical contact with the plurality of contacts.
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Abstract
Embodiments of the present invention provide a multiple fin field effect transistor (finFET) with low-resistance gate structure. A metallization line is formed in parallel with the gate, and multiple contacts are formed over the fins which connect the metallization line to the gate. The metallization line provides reduced gate resistance, which allows fewer transistors to be used for providing In-Out (IO) functionality, thereby providing space savings that enable an increase in circuit density.
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Citations
20 Claims
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1. A semiconductor structure, comprising:
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a semiconductor substrate; a plurality of fins formed in the semiconductor substrate; a gate disposed over the plurality of fins; a plurality of contacts in direct physical contact with the gate and directly over the plurality of fins; and a metallization line disposed over the plurality of contacts, wherein the metallization line is in electrical contact with the plurality of contacts. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor integrated circuit comprising:
a plurality of In-Out (IO) circuits, wherein each 10 circuit comprises at least one finFET device, wherein the at least one finFET device comprises a gate having a length/width aspect ratio ranging from 16 to 60. - View Dependent Claims (15, 16)
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17. A semiconductor structure, comprising:
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a semiconductor substrate; a plurality of fins formed in the semiconductor substrate; a gate disposed over the plurality of fins, wherein the plurality of fins comprises between 40 fins and 100 fins; a plurality of contacts in direct physical contact with the gate and directly over the plurality of fins, wherein a fins per contact parameter ranges from 5 fins to 20 fins; and a metallization line disposed over the plurality of contacts, wherein the metallization line is in electrical contact with the plurality of contacts. - View Dependent Claims (18, 19, 20)
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Specification