LIGHT-EMITTING DEVICE HAVING EXCELLENT CURRENT SPREADING EFFECT AND METHOD FOR MANUFACTURING SAME

• US 20150311415A1
• Filed: 11/22/2013
• Published: 10/29/2015
• Est. Priority Date: 11/23/2012
• Status: Abandoned Application

• Current Assignee: Iljin LED Co., Ltd. (Lotte Chemical Corporation)
• Original Assignee: Iljin LED Co., Ltd. (Lotte Chemical Corporation)
• Inventors: SONG, Jung-Sub, KIM, Dong-Woo, KIM, Keuk, CHOI, Won-Jin, HWANG, Seung-Joo
• Application Number:
  US14/646,526
• Publication Number:
  US 20150311415A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed are a light-emitting device having excellent light-emitting efficiency by a current spreading effect and a method for manufacturing the same. The light-emitting device, according to the present invention, comprises: a light-emitting structure which is formed on a substrate, includes a first semiconductor layer, an active layer, and a second semiconductor layer, and in which a plurality of trenches are formed up to the second semiconductor layer and the active layer; a first electrode formed to come in contact with the second semiconductor layer of the light-emitting structure; and a second electrode formed to come in contact with the first semiconductor layer along at least one edge of the substrate.

Claims

1. A light-emitting device, comprising:

a light-emitting structure formed over a substrate and configured to comprise a first semiconductor layer, an active layer, and a second semiconductor layer and to have a plurality of trenches formed up to the second semiconductor layer and the active layer;

a first electrode formed to come in contact with the second semiconductor layer of the light-emitting structure; and

a second electrode formed to come in contact with the first semiconductor layer of the light-emitting structure along at least one edge of the substrate.

2. The light-emitting device according to claim 1, wherein the first electrode has a single layer or a plurality of stacked layers.

3. The light-emitting device according to claim 1, wherein part of or the entire second electrode is formed of a construct identical with a construct of part of or the entire first electrode.

4. The light-emitting device according to claim 1, wherein one or more line protrusions are formed toward the substrate in part of the second electrode.

5. The light-emitting device according to claim 1, wherein the substrate comprises:

a first region defining a region corresponding to a first bump, and

a second region defining a region corresponding to a second bump.

6. The light-emitting device according to claim 5, further comprising:

an insulating layer formed over the first electrode, the second electrode, and the light-emitting structure and configured to comprise a plurality of first contact holes exposing the first semiconductor layer and one or more second contact holes exposing the second electrode within the first region and a plurality of third contact holes exposing the first electrode within the second region;

the first bump formed to be bonded to the first semiconductor layer through the first contact hole and bonded to the second electrode through the second contact hole over the insulating layer of the first region;

the second bump formed to be bonded to the first electrode through the third contact hole over the insulating layer of the second region; and

a submount substrate formed to be bonded to the first and the second bumps and configured to comprise first and second conductive pads in accordance with the first and the second bumps, respectively.

7. The light-emitting device according to claim 6, wherein one or more line protrusions are formed toward the substrate in part of the second electrode, the second contact hole is formed over the line protrusions.

8. The light-emitting device according to claim 6, further comprising a covering layer formed to cover an exposed surface of the first electrode between the first electrode and the insulating layer.

9. The light-emitting device according to claim 1, wherein:

the first semiconductor layer has an n type, and

the second semiconductor layer has a p type.

10. The light-emitting device according to claim 9, wherein:

the first electrode comprises a p-side electrode, and

the second electrode comprises an n-side electrode.

11. A method of manufacturing a light-emitting device, comprising:

forming a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer over a substrate;

forming a plurality of trenches by etching at least the second semiconductor layer and the active layer; and

forming part of or the entire second electrode using a construct identical with a construct of part of or the entire first electrode along at least one edge of the substrate over the first semiconductor layer while forming the first electrode over the second semiconductor layer.

12. The method according to claim 11, wherein the first electrode has a single layer or a plurality of stacked layers.

13. The method according to claim 11, further comprising forming one or more line protrusions toward the substrate in part of the second electrode.

14. The method according to claim 11, wherein the second electrode and the first electrode are formed by a simultaneous process.

15. The method according to claim 11, wherein the trench is formed by a mesa etching process.

16. The method according to claim 11, wherein the substrate comprises:

a first region defining a region corresponding to a first bump, and

a second region defining a region corresponding to a second bump.

17. The method according to claim 16, further comprising:

forming an insulating layer, comprising a plurality of contact holes exposing the first semiconductor layer and one or more second contact holes exposing the second electrode within the first region and a plurality of third contact holes exposing the first electrode within the second region, over the first electrode, the second electrode, and the light-emitting structure;

forming the first bump bonded to the first semiconductor layer through the first contact hole and bonded to the second electrode through the second contact hole over the insulating layer of the first region;

forming the second bump bonded to the first electrode through the third contact hole over the insulating layer of the second region; and

bonding a submount substrate, comprising first and second conductive pads respectively corresponding to the first and the second bumps, to the first and the second bumps.

18. The method according to claim 11, further comprising forming a covering layer which covers an exposed surface of the first electrode before forming the insulating layer.