METHOD OF MAKING CARBON NANOTUBE COMPOSITE LAYER

• US 20150311459A1
• Filed: 04/22/2015
• Published: 10/29/2015
• Est. Priority Date: 04/24/2014
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: JIN, YUAN-HAO, LI, QUN-QING, FAN, SHOU-SHAN
• Granted Patent: US 10,347,855 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/484 characterised by the channel regions
• CPC Class Codes: H10K 10/488 the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 71/15 characterised by the solvent used
• CPC Class Codes: H10K 85/221 Carbon nanotubes

Abstract

A method of making carbon nanotube composite layer includes following steps. A first suspension having a number of semiconductor particles is formed. The number of semiconductor particles are deposited on a substrate. A second suspension comprising a number of carbon nanotubes is provided. The number of carbon nanotubes in the second suspension are deposited on the substrate with the number of semiconductor particles.

Claims

1. A method of making carbon nanotube composite layer, the method comprising:

forming a first suspension comprising a plurality of semiconductor particles;

depositing the plurality of semiconductor particles on a substrate;

providing a second suspension comprising a plurality of carbon nanotubes; and

depositing the plurality of carbon nanotubes on the substrate with the plurality of semiconductor particles thereon to form a mixture.

2. The method of claim 1, wherein the plurality of carbon nanotubes are pure semiconductor carbon nanotubes.

3. The method of claim 1, wherein a weight ratio between the plurality of carbon nanotubes and the plurality of semiconductor particles of the mixture ranges form about 1:

1000 to about 1;

3000.

4. The method of claim 1, wherein the first suspension are obtained by dispersing the plurality of semiconductor particles in a first solvent, the plurality of semiconductor particles are deposited on the substrate via physical deposition method, and a deposition time ranges from about 5 hours to about 24 hours.

5. The method of claim 4, wherein the first suspension is formed by:

providing a semiconductor material, wherein the semiconductor material is a layered structure;

mixing and sonicating the semiconductor material in the first solvent, wherein the plurality of semiconductor particles are dispersed in the first solvent, and each of the plurality of semiconductor particles comprises a number of semiconductor molecular layers, and the quantity of the plurality of semiconductor layers ranges from about 1 to about 20.

6. The method of claim 5, wherein a material of the semiconductor material is selected from the group consisting of MoS₂, WS2, BN, MnO₂, ZnO, MoSe₂, MoTe₂, TaSe₂, NiTe₂, and Bi₂Te₃.

7. The method of claim 5, wherein each of the plurality of semiconductor particles is semiconductor fragment, a size of the semiconductor fragment ranges from about 0.1 square micrometers to about 5 square micrometers, and a thickness of the semiconductor fragment ranges from about 2 nanometers to about 20 nanometers.

8. The method of claim 5, wherein an ultrasonic power ranges from about 300 watts to about 600 watts, and an ultrasonic time ranges from about 5 hours to about 24 hours.

9. The method of claim 4, wherein the first solvent is selected from the group consisting of water, ethanol, N-methylpyrrolidone, acetone, chloroform, and tetrahydrofuran.

10. The method of claim 1, wherein the second suspension are formed by dispersing the plurality of carbon nanotubes in a second solvent, and a mixed ratio between the plurality of carbon nanotubes and the second solvent ranges from about 1 mg/200 mL to about 1 mg/40 mL.

11. The method of claim 10, wherein the second solvent is polar solvent and selected from the group consisting of water, ethanol, N-methyl pyrrolidone, acetone, chloroform, or tetrahydrofuran.

12. The method of claim 1, wherein the substrate is pretreated to form a polar surface before depositing the plurality of semiconductor particles.

13. The method of claim 12, wherein the surface of the substrate is treated with a mixture of hydrogen peroxide and ammonia.

14. The method of claim 12, wherein a plurality of polar groups is formed on the surface of the substrate.

15. The method of claim 14, wherein the plurality of carbon nanotubes are attracted by the polar surface.

16. The method of claim 15, wherein a deposition time of the plurality of carbon nanotubes ranges from about 20 minutes to about 2 hours.

17. The method of claim 1, wherein the plurality of semiconductor particles are in directly contact with the plurality of carbon nanotubes in the mixture.

18. The method of claim 17, wherein the plurality of semiconductor particles and the plurality of carbon nanotubes are electrically connected with each other to form a conductive network in the mixture.

19. The method of claim 1, wherein a ratio of the plurality of semiconductor particles in the mixture ranges from about 30% to about 50% in area.